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onsemi Darlington Transistor NPN, 4 A, 60 V dc, HFE 1000, 3-Pin TO-220 2N6387G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | 2N6387G |
| Mount Type | Through Hole |
| Series | 2N6388 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 60V dc |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 60V dc |
| Maximum Collector Cut-off Current | 1mA |
| Maximum Power Dissipation Pd | 65W |
| onsemi 1 Darlington Transistor NPN, 4 A 60 V dc HFE | 1000, 3-Pin TO-220 |
Key Features
- This NPN Darlington transistor features a minimum DC current gain (hFE) of 1000.
- It is packaged in a 3-pin TO-220 type package suitable for through-hole mounting.
- The transistor supports a maximum power dissipation of 65 W and operates up to 150°C.
- Low collector-emitter saturation voltage of maximum 2 V ensures efficient switching performance.
- The device offers robust operating temperature range from -65°C to 150°C.
- With built-in base-emitter shunt resistors, it enables monolithic construction and reliable operation.
- The compact TO-220AB package provides efficient heat dissipation for amplifier and switching applications.
Product Description
onsemi 2N6387G Darlington Transistor NPN, rated for 4 A continuous collector current and 60 V collector-emitter voltage, is a versatile semiconductor device for power amplification and low speed switching in electronics and electrical applications.
Designed with monolithic construction and integrated base-emitter shunt resistors, this transistor supports high current gain with a typical hFE of 1000, delivering excellent amplification characteristics.
Its robust operation within a temperature range from -65°C to 150°C enables durable use in various industrial environments. The device comes in a TO-220 package for efficient heat dissipation and convenient through-hole mounting.
The maximum power dissipation of 65 W and low saturation voltage of 2 V contribute to energy-efficient switching, making it suitable for power amplifiers, control circuits, and general-purpose electronic designs.
The 3-pin layout simplifies circuit integration, and the transistor's NPN polarity makes it compatible with numerous electronic configurations. This Darlington transistor supports up to 4 A maximum continuous collector current.
Maximum collector-emitter voltage is rated at 60 V dc. TO-220 package type enables through-hole mount. High minimum DC current gain (hFE) of 1000 allows strong signal amplification. Operating temperature ranges from -65°C to 150°C providing wide industrial application usage.
Compact and robust design with built-in protection resistors. Power dissipation rating of 65 W supports sustained operation under load.
This transistor is suitable for electronic components assemblies in industrial electronics, power management, amplifier circuits, switching applications, and other commercial and laboratory uses. It is a reliable solution for enhancing current gain in NPN Darlington transistor configurations.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4 A.
This transistor has a maximum collector-emitter voltage rating of 60 V dc.
The minimum DC current gain (hFE) for this transistor is 1000.
The 2N6387G is packaged in a TO-220 type package suitable for through-hole mounting.
This model supports a maximum power dissipation of 65 W.
The operating temperature range for this transistor is from -65°C to 150°C.
The dimensions of the TO-220 package are 15.75 mm in height and 10.53 mm in length.
The maximum collector-emitter saturation voltage for this transistor is 2 V.
The 2N6387G is an NPN Darlington transistor.
Yes, it features built-in base-emitter shunt resistors for reliable operation.
This transistor is suitable for power amplification, control circuits, and general-purpose electronic designs.
The 2N6387G has a pin count of 3.
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