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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | TIP142T |
| Mount Type | Through Hole |
| Series | TIP142T |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 500 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 1mA |
| Maximum Power Dissipation Pd | 90W |
| STMicroelectronics TIP142T 1 Darlington Transistor NPN, 10 A 100 V HFE | 500, 3-Pin TO-220 |
STMicroelectronics TIP142T Darlington Transistor is an NPN type discrete semiconductor designed for industrial and electronic power switching and amplification applications. Its robust electrical characteristics include a maximum continuous collector current of 10 A and collector-emitter voltage rating of 100 V, making it suitable for medium to high power load environments.
The device is housed in a TO-220 package with a through-hole mounting style and features three pins that allow straightforward integration into electronic circuits. It offers a minimum DC current gain (hFE) of 500, providing efficient signal amplification needed in power regulation and control systems.
Operating comfortably in temperature ranges from -65°C to 150°C, the TIP142T transistor is well-suited for use in automotive, industrial, and HVAC systems requiring durable transistor operation under variable environmental conditions. Its maximum power dissipation is rated at 90 W, supporting high power applications without compromising reliability.
Additional electrical parameters include a maximum emitter base voltage of 5 V, collector-emitter saturation voltage of 2 V, and collector cut-off current of 1 mA, all optimized for stability and performance consistency.
The transistor consists of a single element per chip, designed by STMicroelectronics to meet demanding bipolar transistor applications. The compact size (length 10.4 mm, height 9.15 mm) complements its ease of use in tight circuit layouts.
Designed for power switching and amplification applications. Maximum power dissipation rating of 90 W ensures robust performance. Exceptional minimum DC current gain (hFE) of 500 enhances amplification efficiency. Wide operating temperature range from -65°C to 150°C ensures reliability in harsh environments.
Three-pin through-hole mount suitable for easy PCB installation. NPN bipolar transistor polarity for various circuit designs. Compact dimensions with a length of 10.4 mm and height of 9.15 mm. Includes features like maximum emitter base voltage of 5 V and saturation voltage of 2 V.
Single element per chip for consistent electrical characteristics.
Used extensively in industrial electronics, laboratory instrumentation, manufacturing equipment, and automotive electronics, this STMicroelectronics TIP142T transistor meets rigorous technical demands for power control and amplification tasks. Explore the Darlington Transistor category on EnvMart for compatible components and accessories to build efficient electronic systems.
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