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onsemi Darlington Bipolar Power Transistor NPN 8A 100V TO-220 Package TIP102G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 9.28mm
Length 10.28mm
Model TIP102G
Mount Type Through Hole
Series TIP100
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.05mA
Maximum Power Dissipation Pd 80W
onsemi 1 Darlington Transistor NPN, 8 A 100 V HFE 200, 3-Pin TO-220
STMicroelectronics 1 Darlington Transistor NPN, 8 A 100 V HFE 200, 3-Pin TO-220Brand: STMicroelectronics
NPN darlington transistor,TIP102 8ABrand ON Semiconductor

Key Features

  • Rated for a maximum continuous collector current of 8 amperes.
  • Maximum collector-emitter voltage of 100 volts supports high-voltage applications.
  • Features a TO-220 through hole package with 3 pins for reliable mounting.
  • High DC current gain of 200 ensures strong amplification capabilities.
  • Maximum power dissipation rated at 80 watts to handle significant power loads.
  • Capable of operating in a wide temperature range from -65°C to 150°C.
  • Designed for general-purpose amplifier and low-speed switching applications.
  • Bipolar NPN transistor polarity suited for various electronic circuits.

Product Description

onsemi TIP102G is a Darlington bipolar power transistor designed for applications requiring high current amplification and switching capabilities. This NPN transistor supports a maximum continuous collector current of 8 A and can withstand voltages up to 100 V collector-emitter, making it suitable for power control and amplifier circuits.

Encapsulated in a TO-220 package, the transistor is designed for through-hole mounting, offering ease of installation and good thermal dissipation capabilities. It features a high DC current gain with a minimum hFE of 200 and a maximum power dissipation of 80 W, allowing it to handle significant loads in industrial and consumer electronics.

The device operates reliably over a wide temperature range of -65°C to 150°C, suitable for demanding environments in industrial, automotive, and general electronic applications. With a maximum emitter-base voltage of 5 V and a collector-emitter saturation voltage of 2 V, it ensures efficient performance in both linear and switching modes.

This transistor is RoHS compliant and lead-free, supporting environmental regulations and sustainability efforts. The TIP102G from onsemi is ideal for use in power amplifiers, relay drivers, and other control applications.

Maximum continuous collector current of 8 A. Collector-emitter voltage rating of 100 V. High gain of at least 200 hFE. TO-220 package for through-hole mounting. Power dissipation capability of 80 W. Wide operating temperature range from -65°C to 150°C.

Bipolar NPN transistor polarity. Maximum emitter-base voltage of 5 V. Low saturation voltage of 2 V ensuring efficient switching. Lead-free, RoHS compliant construction.

Widely used in electronics manufacturing, industrial control systems, and power amplification circuits, the TIP102G ensures reliable and durable performance. Explore more Darlington Transistors and semiconductor devices at EnvMart.

onsemi Darlington Bipolar Power Transistor NPN 8A 100V TO-220 Package TIP102G
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Frequently Asked Questions

The maximum continuous collector current for this model is 8 amperes.

It supports a maximum collector-emitter voltage of 100 volts, suitable for high-voltage applications.

The TIP102G has a maximum power dissipation rating of 80 watts, allowing it to handle significant power loads.

This model features a minimum DC current gain of 200, providing strong amplification capabilities.

It operates reliably over a wide temperature range from -65°C to 150°C, making it suitable for various environments.

This transistor is encapsulated in a TO-220 package, designed for through-hole mounting.

The TIP102G has a total of 3 pins for connection.

The maximum emitter-base voltage for the TIP102G is 5 volts.

The maximum collector-emitter saturation voltage is 2 volts, ensuring efficient performance in switching applications.

This model is a bipolar NPN transistor, suitable for various electronic circuits.

It is designed for general-purpose amplifier and low-speed switching applications, including power amplifiers and relay drivers.

Yes, the TIP102G is RoHS compliant and lead-free, supporting environmental regulations.

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