onsemi Darlington Transistor PNP 2 A 100 V dc TO-220, 3-Pin, HFE:500 TIP117G

The onsemi TIP117G is a Darlington Bipolar Power Transistor designed for general purpose amplifier and low speed switching applications. It supports a maximum continuous collector current of 2 A and a maximum collector-emitter voltage of 100 V dc, housed in a robust TO-220 package with 3 pins for through-hole mounting.

This transistor is PNP polarity with a high minimum DC current gain (hFE) of 500, enhancing amplification performance. It features a maximum power dissipation of 50 W, enabling it to handle substantial power loads reliably.

The device operates over a broad temperature range from -65°C to 150°C, providing stability in diverse environments. It has a low maximum collector-emitter saturation voltage of 2.5 V dc at 2 A collector current, making it efficient for switching applications. Its maximum emitter-base voltage is rated at 5 V dc.

Constructed with monolithic technology and built-in base-emitter shunt resistors, the TIP117G ensures improved performance and protection in circuits. The compact TO-220 AB package offers excellent heat dissipation and ease of mounting in power electronics setups.

Designed for amplifier and switching electronic circuits. High current gain ensuring efficient performance. Durable construction with built-in resistors. Suitable for industrial, laboratory, electronic, and power electronics applications.

Wide operating temperature and voltage ratings. Compact TO-220 package for convenient mounting.

This transistor is ideal for use in industrial control systems, power amplifiers, relay drivers, and other low-speed switching circuits requiring reliable performance and durability.

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