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STMicroelectronics NPN Darlington Transistor 4 A 60 V 750 hFE 40 W Power Dissipation SOT-32 BD677

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 10.8mm
Length 7.8mm
Model BD677
Mount Type Through Hole
Series BD677
Maximum Operating Temperature 150°C
Package Type SOT-32
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 4A
Maximum Collector Emitter Voltage Vceo 60V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 750
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
Maximum Collector Base Voltage VCBO 60V
Maximum Collector Cut-off Current 0.2mA
Maximum Power Dissipation Pd 40W
onsemi BD677AG NPN Darlington Transistor, 4 A 60 V HFE 750, 3-Pin TO-225Brand: ON Semiconductor
STMicroelectronics 1 Darlington Transistor NPN, 4 A 60 V HFE 750, 3-Pin SOT-32

Key Features

  • Maximum continuous collector current of 4 A for efficient switching performance.
  • Collector-emitter voltage rating of 60 V suitable for medium voltage applications.
  • High DC current gain (hFE) of 750 ensuring amplification efficiency.
  • Package type SOT-32 with 3 pins for through-hole mounting ease.
  • Maximum power dissipation of 40 W supports high power handling.
  • Operating temperature range from -65°C to 150°C for reliable operation in varying environments.
  • Low collector cut-off current of 0.2 mA minimizes leakage current losses.
  • Designed with NPN transistor polarity for standard switching functionality.

Product Description

STMicroelectronics BD677 is a high-performance NPN Darlington Transistor designed for power amplification and switching applications in electronic circuits. Rated at a continuous collector current of 4 A and a maximum collector-emitter voltage of 60 V, it is suitable for medium power electronic applications requiring robustness and reliability.

The transistor features a high current gain (hFE) of 750, which provides excellent amplification capabilities. It comes in a SOT-32 package with 3 pins, supporting through-hole mounting processes common in circuit boards.

With a maximum power dissipation capability of 40 W, this transistor ensures efficient operation under demanding power conditions. Its operational temperature range from -65°C to 150°C makes it well-suited for industrial, automotive, and commercial electronics working in various thermal environments.

The maximum collector-emitter saturation voltage of 2.5 V and low collector cut-off current of 0.2 mA enhance switching efficiency by reducing power losses during operation. Its compact physical dimensions (7.8 mm length and 10.8 mm height) facilitate integration in space-conscious layouts.

Typical uses include power amplification in audio circuits, switching applications in control devices, and as a component in driver circuits in industrial and automotive electronics. It is a reliable choice for designers looking to achieve robust performance in discrete semiconductor device applications.

Maximum continuous collector current of 4 A. Maximum collector-emitter voltage of 60 V. High DC current gain (hFE) of 750. SOT-32 package with 3-pin through-hole mounting. Maximum power dissipation of 40 W. Operating temperature range from -65°C to 150°C.

Low collector cut-off current of 0.2 mA. NPN transistor polarity. Compact physical dimensions: 7.8 mm length, 10.8 mm height. Maximum collector-emitter saturation voltage of 2.5 V. Explore EnvMart's extensive selection of semiconductor components and discrete transistors for your next industrial or commercial electronics project.

STMicroelectronics NPN Darlington Transistor 4 A 60 V 750 hFE 40 W Power Dissipation SOT-32 BD677
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Frequently Asked Questions

The maximum continuous collector current of this model is 4 A, allowing for efficient switching performance.

The collector-emitter voltage rating for the BD677 is 60 V, making it suitable for medium voltage applications.

The BD677 has a high DC current gain (hFE) of 750, which ensures effective amplification efficiency.

This model comes in a SOT-32 package type, featuring 3 pins for through-hole mounting ease.

The maximum power dissipation for this transistor is 40 W, supporting high power handling capabilities.

The operating temperature range of this model is from -65°C to 150°C, allowing reliable operation in varying environments.

The maximum collector-emitter saturation voltage for this transistor is 2.5 V, which enhances switching efficiency.

The physical dimensions of this model are 7.8 mm in length and 10.8 mm in height, facilitating integration in space-constrained layouts.

The maximum collector cut-off current for this transistor is 0.2 mA, which minimizes leakage current losses.

The BD677 is designed with NPN transistor polarity, suitable for standard switching functionality.

This model is typically used for power amplification in audio circuits and switching applications in control devices.

The maximum emitter-base voltage for this transistor is 5 V, ensuring safe operation within specified limits.

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