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STMicroelectronics Darlington Transistor PNP 12 A 100 V 33 W TO-220 BDW94CFP

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STMicroelectronics Darlington Transistor PNP 12 A 100 V 33 W TO-220 BDW94CFP

Name: STMicroelectronics Darlington Transistor PNP 12 A 100 V 33 W TO-220 BDW94CFP
Brand: STMicroelectronics
SKU: 372158
Price: 1.23 USD
Availability: InStock

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Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	BDW94CFP
Mount Type	Through Hole
Series	BDW94CFP
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	12A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	5mA
Maximum Power Dissipation Pd	33W
STMicroelectronics 1 Darlington Transistor PNP, 12 A 100 V HFE	100, 3-Pin TO-220

Key Features

Maximum continuous collector current of 12 amperes ensures reliable power handling.
Collector-emitter voltage rating up to 100 volts supports high voltage applications.
Power dissipation up to 33 watts allows for efficient thermal management.
Minimum DC current gain (hFE) of 100 provides strong amplification.
Stable operation in temperature range from -65°C up to 150°C.
Designed as a PNP bipolar Darlington transistor for high current gain requirements.
Package type TO-220 enables easy mounting and integration in through-hole circuits.
Maximum saturation voltage (VceSAT) of 2 volts for enhanced switching performance.

Product Description

STMicroelectronics BDW94CFP is a PNP Darlington Transistor designed for discrete semiconductor applications requiring robust current and voltage ratings. This 3-pin transistor comes in a TO-220 package, featuring a maximum continuous collector current of 12 A and collector-emitter voltage of 100 V, making it well suited for power amplification and switching in electronic circuits.

The transistor offers a minimum DC current gain (hFE) of 100, enabling efficient signal amplification with low input current. It supports a maximum power dissipation of 33 W, ensuring stable operation under demanding electrical loads while maintaining effective heat dissipation when mounted appropriately.

This device is characterized by a maximum collector-emitter saturation voltage of 2 V, facilitating fast switching and low voltage drop when in saturation, critical for power switching applications. The device operates reliably within a wide temperature range from -65°C to 150°C, ensuring durable performance in industrial and automotive environments.

The BDW94CFP transistor features a through-hole mount type, providing mechanical stability and ease of installation in PCB designs that require durable power semiconductor components. Its maximum emitter-base voltage is rated at 5 V, and maximum collector-base voltage is 100 V, suitable for a variety of circuit topologies including amplifiers, motor drives, and power regulators.

Maximum continuous collector current of 12 A. Maximum collector-emitter voltage of 100 V. TO-220 package with 3 pins for through-hole mounting. Minimum DC current gain (hFE) of 100. Maximum power dissipation of 33 W. Maximum collector-emitter saturation voltage of 2 V.

Operating temperature range from -65°C to 150°C. PNP transistor polarity for Darlington configuration. Maximum emitter-base voltage of 5 V and collector-base voltage of 100 V.

This transistor is ideal for industrial, automotive, and high power electronics applications requiring reliable, high-gain switching devices. Explore the range of STMicroelectronics semiconductors at EnvMart for your project needs.