onsemi Darlington Transistor NPN, 2A, 100V, 3-Pin TO-252 Surface Mount MJD112T4G

The onsemi MJD112T4G is a high-performance NPN Darlington Transistor designed for industrial, automotive, and demanding electronic applications. With a maximum collector current of 2A and collector-emitter voltage rated at 100V, this transistor is tailored for use in robust switching, power amplification, and control circuits.

Housed in a TO-252 surface mount package, the MJD112T4G provides a compact footprint ideal for PCB assembly and efficient thermal management. Its minimum DC current gain hFE of 200 ensures efficient amplification, making it suitable for applications requiring high current gain and stable performance.

Capable of handling a maximum power dissipation of 20W, this transistor supports continuous operation in environments subject to thermal stress. The operating temperature range of -65°C to 150°C broadens its usability across industrial and automotive sectors, including controls, drive circuits, inverters, and signal amplifiers for commercial and laboratory equipment.

The device adheres to the AEC-Q101 automotive standard, ensuring reliability for automotive and transport electronics. It features a low collector cut-off current of 0.02mA, minimizing leakage currents and improving off-state efficiency.

With a 3-pin configuration and surface mount assembly, integration into modern circuit designs is straightforward. The MJD112T4G's NPN Darlington polarity delivers superior current gain, which enables efficient switching and powerful amplification for a range of applications.

The compact package dimensions (Height: 2.38mm, Length: 6.73mm) further support installation in space-constrained electronic assemblies, while the maximum collector emitter saturation voltage of 2V and emitter-base voltage of 5V allow for compatibility with varied circuit designs.

Ideal for industrial, laboratory, automotive, and commercial electronic circuit designs, the onsemi MJD112T4G offers reliability and performance for engineers seeking robust discrete semiconductors.

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