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STMicroelectronics NPN Darlington Transistor, 12 A 100 V 80 W TO-220 Package BDW93C

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model BDW93C
Mount Type Through Hole
Series BDW93C
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 12A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.1mA
Maximum Power Dissipation Pd 80W
STMicroelectronics 1 Darlington Transistor NPN, 12 A 100 V HFE 100, 3-Pin TO-220

Key Features

  • Features a TO-220 through-hole package with 3 pins for easy PCB integration.
  • Maximum power dissipation of 80 W supports high power operation.
  • High DC current gain (hFE) minimum of 100 for amplification efficiency.
  • Safe operating temperature range from -65°C to 150°C for robust use.
  • Maximum collector-emitter saturation voltage of 2 V ensures low voltage drop.
  • Maximum emitter-base voltage of 5 V and collector-base voltage of 100 V provide high voltage tolerance.
  • Compact dimensions of 9.15 mm height and 10.4 mm length allow for space saving designs.
  • NPN transistor polarity suitable for amplification and switching circuits.

Product Description

STMicroelectronics BDW93C is a high-power NPN Darlington Transistor featuring a maximum continuous collector current of 12 A and a maximum collector emitter voltage of 100 V. Its robust TO-220 package supports through-hole mounting with 3 pins, making it ideal for industrial, power supply, amplifier, and switching applications.

The transistor provides a high DC current gain (minimum hFE of 100), which enhances signal amplification efficiency in electronic circuits. It boasts a maximum power dissipation of 80 W, enabling reliable operation in demanding power environments.

The device supports a wide operating temperature range from -65°C to 150°C, ensuring durability and performance stability under harsh conditions. Electrical characteristics include a maximum collector-emitter saturation voltage of 2 V and emitter-base voltage of 5 V, allowing for efficient switching and voltage handling.

With compact physical dimensions of 9.15 mm height and 10.4 mm length, the BDW93C transistor is suited for PCB designs with limited space. It contains a single transistor element in its Darlington pair configuration, optimized for power transistor applications.

This product is not certified to automotive standards but is widely used in industrial electronics, power management, manufacturing controls, and other applications requiring high current and voltage capabilities.

Compact TO-220 package allowing easy heat dissipation and mounting. Robust electrical ratings supporting continuous high current and voltage. Suitable for industrial, electronic component manufacturing, and power supply design.

Reliable operation over a broad temperature range. Ideal choice for amplification and switching in power transistor circuits. Explore similar high-performance transistors and electronic components in the Electronics category at EnvMart for your project and production needs.

STMicroelectronics NPN Darlington Transistor, 12 A 100 V 80 W TO-220 Package BDW93C
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Frequently Asked Questions

The BDW93C transistor has a maximum continuous collector current of 12 A.

The maximum collector-emitter voltage for the BDW93C is 100 V.

This model supports a maximum power dissipation of 80 W.

The TO-220 package of the BDW93C has a height of 9.15 mm and a length of 10.4 mm.

The BDW93C has a minimum DC current gain (hFE) of 100.

The safe operating temperature range for this model is from -65°C to 150°C.

The maximum collector-emitter saturation voltage for the BDW93C is 2 V.

This transistor supports through-hole mounting with 3 pins.

The maximum emitter-base voltage for this model is 5 V.

The BDW93C is suitable for industrial, power supply, amplifier, and switching applications.

The BDW93C contains a single transistor element in its Darlington pair configuration.

The BDW93C is manufactured in India.

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