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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.51mm |
| Length | 39.37mm |
| Model | MJ11012G |
| Mount Type | Through Hole |
| Series | MJ11012 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Continuous Collector Current Ic | -20A |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 200W |
| onsemi 2 Darlington Transistor NPN, -20 A 60 V HFE | 200, 2-Pin TO-204 |
onsemi MJ11012G is a high-performance NPN Darlington Transistor featuring a continuous collector current capacity of 20 amperes and a maximum collector-emitter voltage rating of 60 volts. Packaged in a durable TO-204 2-pin format, this component is designed for through-hole mounting, ensuring stable installation in various electronic assemblies.
With a minimum DC current gain (hFE) of 200, this transistor provides superior amplification capabilities, suitable for demanding power switching and control applications. The maximum power dissipation rating of 200 watts enables it to handle heavy loads efficiently without thermal degradation.
The transistor operates reliably across a wide temperature range from -55°C up to 200°C, making it suitable for industrial, automotive, and electronic manufacturing environments where thermal extremes are common. The NPN configuration and maximum emitter-base voltage of 5V contribute to its robust switching characteristics.
Its maximum collector-emitter saturation voltage of 3V ensures low voltage drop during conduction, enhancing overall circuit efficiency. The transistor's length of 39.37mm and height of 8.51mm are optimized for integration in power modules.
This part does not have specific automotive certification but belongs to onsemi’s MJ11012 series of industrial Darlington transistors, widely used across applications requiring high current and voltage handling in reliable discrete semiconductor solutions.
High gain for efficient amplification. Robust TO-204 through-hole package. Wide operating temperature range. High power dissipation rating. Low saturation voltage for energy efficiency. 2-pin design for easy mounting. Suitable for industrial and automotive applications.
For engineers and designers seeking reliable high-power transistor solutions, the onsemi MJ11012G Darlington Transistor offers excellent performance and durability. Explore EnvMart's Electronics & Electricals category for more semiconductor components and power transistors from onsemi and other leading manufacturers.
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