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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.28mm |
| Model | TIP111G |
| Mount Type | Through Hole |
| Series | TIP110 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 2A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 500 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 2mA |
| Maximum Power Dissipation Pd | 50W |
| onsemi 1 Darlington Transistor NPN, 2 A 80 V HFE | 500, 3-Pin TO-220 |
onsemi TIP111G is a Darlington bipolar power transistor optimized for general amplification and low-speed switching in electronic circuits. This NPN transistor supports a maximum continuous collector current of 2 A and can withstand collector emitter voltages up to 80 V. Its high DC current gain of 500 promotes effective signal amplification.
The device is packaged in a TO-220 through-hole style with 3 pins, facilitating easy integration in various board layouts. It dissipates up to 50 W of power, meeting requirements for applications that demand higher power handling capability.
This transistor operates reliably in temperatures ranging from -65°C to 150°C, making it suitable for diverse industrial and commercial environments including power management and control systems.
Additional specifications include a maximum emitter base voltage of 5 V, maximum collector saturation voltage of 2.5 V, and a maximum collector base voltage of 80 V. The device is lead-free and RoHS compliant, ensuring environmental safety standards adherence.
Typical applications for this transistor include power amplifiers, motor drivers, relay drivers, and switching regulators used in laboratories, manufacturing, automotive electronics, and consumer electronics.
Maximum continuous collector current of 2 A ensures robust performance. Maximum collector emitter voltage is rated at 80 V for high-voltage applications. High DC current gain with minimum hFE of 500 for efficient amplification.
Through hole mount type with TO-220 package and 3-pin configuration. Maximum power dissipation of 50 W allows for demanding power handling. Operating temperature range from -65°C to 150°C suitable for various environments.
NPN transistor polarity designed for standard bipolar applications. Minimal collector cut-off current of 2 mA improves switching efficiency.
Choose from a reliable and widely used transistor for all your electronic amplification and switching needs. Explore more onsemi semiconductor products at EnvMart for industrial, laboratory, and commercial applications.
Explore more products in our Darlington Transistor category.
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