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DiodesZetex Darlington Transistor NPN 800 mA 60 V TO-92 3-Pin High Gain BCX38C
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | BCX38C |
| Mount Type | Through Hole |
| Series | BXC38C |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 800mA |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 100nA |
| Maximum Power Dissipation Pd | 1W |
| DiodesZetex BCX38C 1 Darlington Transistor NPN, 800 mA 60 V HFE | 5000, 3-Pin TO-92 |
Key Features
- High DC gain with minimum hFE of 5000.
- Maximum continuous collector current is 800 mA.
- Collector-emitter voltage rating of 60 V ensures reliable operation.
- Through-hole mount type for easy PCB integration.
- Operates over a temperature range from -55°C to 200°C.
- Compact TO-92 package with 4.77 mm length and 4.01 mm height.
- Low collector-emitter saturation voltage for efficient switching.
- Designed for general purpose amplification and switching applications.
Product Description
The DiodesZetex BCX38C is a high gain NPN Darlington Transistor designed for amplification and switching applications within industrial and electronic systems. Featuring a maximum continuous collector current of 800 mA and collector-emitter voltage of 60 V, this transistor ensures reliable performance for demanding circuits.
Housed in a compact TO-92 through-hole package with 3 pins, the BCX38C facilitates straightforward integration on printed circuit boards. Its minimum DC current gain (hFE) of 5000 ensures high amplification efficiency, suitable for signal amplification in electronic components, power management, and control systems.
Operating within a wide temperature range from -55°C to 200°C, this transistor is engineered for durability and stability in harsh environments, making it ideal for industrial, electronic component manufacturing, automotive electronics, instrumentation, and power control applications.
The maximum power dissipation rating of 1 W combined with collector-emitter saturation voltage specifications contributes to energy efficiency and reliable switching performance. The BCX38C is manufactured to stringent quality standards in China, confirming its suitability for demanding professional applications.
High DC gain (hFE) of 5000 for enhanced amplification. 800 mA collector current capacity for medium-power applications. 60 V collector-emitter voltage rating for versatile use cases. Compact TO-92 3-pin package with through-hole mount.
Wide operating temperature range from -55°C up to 200°C. Low saturation voltage for efficient power switching. 1 W maximum power dissipation for reliable performance. Applications in industrial electronics, instrumentation, and automotive systems.
Quality manufacturing and material standards upheld. Explore the extensive range of DiodesZetex transistors and electronic components at EnvMart to optimize your industrial and manufacturing processes.
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Frequently Asked Questions
The maximum continuous collector current for the BCX38C is 800 mA.
It has a collector-emitter voltage rating of 60 V, ensuring reliable operation in various applications.
The minimum DC current gain (hFE) for this transistor is 5000, providing high amplification efficiency.
This model operates over a temperature range from -55°C to 200°C, making it suitable for harsh environments.
It is housed in a compact TO-92 package, which is a through-hole mount type with 3 pins.
The dimensions of this model are 4.77 mm in length and 4.01 mm in height.
The maximum power dissipation rating for the BCX38C is 1 W.
This transistor is designed for general purpose amplification and switching applications, including industrial electronics and automotive systems.
The maximum emitter-base voltage (VEBO) for the BCX38C is 10 V.
The maximum collector-base voltage (VCBO) rating for this transistor is 80 V.
The BCX38C is an NPN type transistor, suitable for various electronic applications.
This model is manufactured in China, adhering to stringent quality standards.
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