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onsemi Digital Transistor 50 V NPN Surface SOT-23 3-Pin MMUN2213LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.3mm
Length 2.9mm
Model MMUN2213LT1G
Width 0.94mm
Mount Type Surface
Series MMUN2213L
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 230mW
Transistor Configuration Single

Key Features

  • Digital transistor with integrated resistors for simplified biasing.
  • 50 V maximum collector-emitter voltage for robust operation.
  • NPN polarity with single transistor configuration provides high gain.
  • Compact SOT-23 surface-mount package suitable for automated assembly.
  • 230 mW maximum power dissipation ensures reliability in demanding applications.
  • Three-pin layout ideal for space-constrained PCB designs.
  • Minimum DC current gain (hFE) of 80 for stable switching.
  • Operating temperature up to 150°C for industrial environments.

Product Description

The onsemi MMUN2213LT1G digital transistor is a compact, surface-mount NPN device designed for applications that demand reliable switching and biasing in electronic circuits. This transistor utilizes an integrated resistor configuration, simplifying circuit design by eliminating the need for external bias resistors.

With a maximum collector-emitter voltage (Vceo) of 50 volts, the MMUN2213LT1G provides robust operation for a range of digital and analog control applications. Its NPN polarity and single transistor configuration support high current gain and stable performance, making it suitable for logic level switching, signal amplification, and microcontroller interfacing.

The SOT-23 package enables automated placement and soldering in high-volume production, while the compact dimensions - length 2.9 mm, width 0.94 mm, and height 1.3 mm - allow integration into space-constrained PCB designs. The device's three-pin layout further facilitates straightforward circuit routing.

The MMUN2213LT1G offers a maximum power dissipation of 230 mW, ensuring reliability even under demanding operational environments. Its minimum DC current gain (hFE) of 80 delivers consistent switching characteristics. Designed to withstand operating temperatures up to 150°C, it is well-suited for industrial, automotive, and consumer electronics applications where thermal stability is essential.

Compliance with automotive standard AEC-Q101 enables usage in automotive circuits requiring enhanced qualification. The device is part of the MMUN2213L series and does not claim any additional formal approvals, ensuring suitability for industrial and commercial deployment without unnecessary certification constraints.

Application areas include digital switching, signal processing, microcontroller interfaces, and bias resistor replacement within industrial, automotive, and consumer electronics. The MMUN2213LT1G is a preferred choice when space saving, reliability, and ease of assembly are critical considerations.

Digital transistor with integrated resistors for simplified biasing. 50 V maximum collector-emitter voltage for robust operation. NPN polarity with single transistor configuration provides high gain. Compact SOT-23 surface-mount package suitable for automated assembly.

230 mW maximum power dissipation ensures reliability in demanding applications. Three-pin layout ideal for space-constrained PCB designs. Minimum DC current gain (hFE) of 80 for stable switching. Operating temperature up to 150°C for industrial environments.

Explore more digital and Bipolar Transistors from onsemi in the Industrial Semiconductors category at EnvMart.

onsemi Digital Transistor 50 V NPN Surface SOT-23 3-Pin MMUN2213LT1G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 50 volts, allowing for robust operation in various applications.

It comes in a compact SOT-23 surface-mount package, which is suitable for automated assembly.

The maximum power dissipation for this transistor is 230 mW, ensuring reliability in demanding applications.

The minimum DC current gain (hFE) is 80, which provides stable switching characteristics.

This transistor can operate at temperatures up to 150°C, making it suitable for industrial environments.

The MMUN2213LT1G features a three-pin layout, ideal for space-constrained PCB designs.

It utilizes a single NPN transistor configuration, which supports high current gain and stable performance.

Yes, it complies with the automotive standard AEC-Q101, making it suitable for automotive applications.

The dimensions are 2.9 mm in length, 0.94 mm in width, and 1.3 mm in height.

This model is suitable for digital switching, signal processing, microcontroller interfaces, and bias resistor replacement in various electronic circuits.

The maximum collector-base voltage (VCBO) is also 50 volts, ensuring robust performance in various applications.

The country of origin for this product is India.

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