The onsemi MMUN2213LT1G digital transistor is a compact, surface-mount NPN device designed for applications that demand reliable switching and biasing in electronic circuits. This transistor utilizes an integrated resistor configuration, simplifying circuit design by eliminating the need for external bias resistors.
With a maximum collector-emitter voltage (Vceo) of 50 volts, the MMUN2213LT1G provides robust operation for a range of digital and analog control applications. Its NPN polarity and single transistor configuration support high current gain and stable performance, making it suitable for logic level switching, signal amplification, and microcontroller interfacing.
The SOT-23 package enables automated placement and soldering in high-volume production, while the compact dimensions - length 2.9 mm, width 0.94 mm, and height 1.3 mm - allow integration into space-constrained PCB designs. The device's three-pin layout further facilitates straightforward circuit routing.
The MMUN2213LT1G offers a maximum power dissipation of 230 mW, ensuring reliability even under demanding operational environments. Its minimum DC current gain (hFE) of 80 delivers consistent switching characteristics. Designed to withstand operating temperatures up to 150°C, it is well-suited for industrial, automotive, and consumer electronics applications where thermal stability is essential.
Compliance with automotive standard AEC-Q101 enables usage in automotive circuits requiring enhanced qualification. The device is part of the MMUN2213L series and does not claim any additional formal approvals, ensuring suitability for industrial and commercial deployment without unnecessary certification constraints.
Application areas include digital switching, signal processing, microcontroller interfaces, and bias resistor replacement within industrial, automotive, and consumer electronics. The MMUN2213LT1G is a preferred choice when space saving, reliability, and ease of assembly are critical considerations.
Digital transistor with integrated resistors for simplified biasing. 50 V maximum collector-emitter voltage for robust operation. NPN polarity with single transistor configuration provides high gain. Compact SOT-23 surface-mount package suitable for automated assembly.
230 mW maximum power dissipation ensures reliability in demanding applications. Three-pin layout ideal for space-constrained PCB designs. Minimum DC current gain (hFE) of 80 for stable switching. Operating temperature up to 150°C for industrial environments.
Explore more digital and Bipolar Transistors from onsemi in the Industrial Semiconductors category at EnvMart.
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