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Infineon OptiMOS 3 N-Channel MOSFET 100 A 150 V Enhancement 3-Pin TO-263 IPB072N15N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB072N15N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for surface mount applications with a compact TO-263 package.
- Features a low 7.7 mΩ maximum drain-source resistance for efficient conduction.
- Supports a maximum power dissipation of 300 W for demanding industrial uses.
- Operates in enhancement mode with a typical gate charge of 70 nC at Vgs.
- Withstands gate-source voltages from -20 to +20 V for robust switching.
- Capable of operating from -55°C to a maximum temperature of 175°C.
- Forward voltage drop is a low 1.2 V, reducing power losses.
- Non-automotive standard rated, suitable for general industrial and electronic applications.
Product Description
Infineon's OptiMOS 3 IPB072N15N3GATMA1 is a robust N-Channel enhancement mode MOSFET designed to meet the demands of high-power and high-efficiency electronics, delivering up to 100 A continuous drain current at 150 V maximum drain-source voltage.
Its surface-mount TO-263 package enables compact PCB layouts and ease of integration in power management circuits, converters, and motor drives. The device offers low on-resistance of 7.7 mΩ, ensuring minimal conduction losses and improved energy efficiency during operation.
Engineered to operate reliably at temperatures ranging from -55°C to 175°C, it is suitable for industrial, power electronics, and equipment manufacturing environments requiring durability and thermal stability.
The gate charge of 70 nC and gate-source voltage tolerance of ±20 V empower designers with flexible switching capabilities, while the maximum power dissipation rating of 300 W supports demanding load conditions.
The physical footprint with dimensions 10.31 mm x 9.45 mm x 4.57 mm facilitates easy integration in surface-mount assemblies. Forward voltage of 1.2 V minimizes energy loss in conduction paths.
This MOSFET is a part of the OptiMOS 3 series from Infineon, known for best-in-class performance in power semiconductors, enhancing efficiency and reliability in diverse applications including industrial power supplies, consumer electronics, and automotive electronics (non-AEC-Q101 rated).
Designed for surface mount applications with a compact TO-263 package. Features a low 7.7 mΩ maximum drain-source resistance for efficient conduction. Supports a maximum power dissipation of 300 W for demanding industrial uses.
Operates in enhancement mode with a typical gate charge of 70 nC at Vgs. Withstands gate-source voltages from -20 to +20 V for robust switching. Capable of operating from -55°C to a maximum temperature of 175°C. Dimensions measure approximately 10.31 mm length, 9.45 mm width, and 4.57 mm height.
Forward voltage drop is a low 1.2 V, reducing power losses. Non-automotive standard rated, suitable for general industrial and electronic applications. Explore the Infineon OptiMOS 3 range on EnvMart for reliable and efficient power management components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It can handle a maximum drain-source voltage of 150 V.
The maximum drain-source resistance is 7.7 mΩ, which ensures efficient conduction.
The typical gate charge is 70 nC at Vgs.
It can operate in temperatures ranging from -55°C to a maximum of 175°C.
The maximum power dissipation rating is 300 W.
This MOSFET uses a TO-263 package type suitable for surface mount applications.
The forward voltage drop is a low 1.2 V, which helps reduce power losses.
This model has a pin count of 3.
The channel type of this device is N-channel.
It can withstand gate-source voltages from -20 V to +20 V.
This model is non-automotive standard rated and is suitable for general industrial and electronic applications.
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