Infineon CoolMOS CE N-Channel MOSFET 13 A 550 V Enhancement 3-Pin TO-220 IPA50R280CEXKSA2

The Infineon IPA50R280CEXKSA2 CoolMOS CE N-Channel MOSFET is a high-performance power semiconductor designed for demanding industrial and electronic applications requiring efficient power switching and control. Rated for a maximum continuous drain current of 13 A and a maximum drain-source voltage of 550 V, this enhancement mode MOSFET delivers reliable performance in power switching operations.

Housed in a versatile 3-pin TO-220 package with through-hole mount type, it integrates easily into standard PCB designs and allows efficient heat dissipation thanks to its power dissipation rating of 30.4 W.

The device features a low on-resistance of 280 mΩ to reduce conduction losses and improve overall efficiency. Typical gate charge is optimized at 32.6 nC to provide fast switching speeds, making it suitable for switching regulators, power supplies, and motor control circuits.

Designed to operate across a wide temperature range from -40°C to 150°C, this MOSFET maintains stable performance under industrial environmental conditions. It also features a wide gate-source voltage range (-30 V to +30 V) to protect against transient voltage spikes.

Its compact dimensions of 16.15 mm height, 10.65 mm length, and 4.9 mm width facilitate usage in tight electronic assemblies. The forward voltage of 850 mV ensures efficient current flow with minimal voltage drop.

Ideal for applications in industrial power electronics, automation systems, power supplies, and consumer electronics requiring robust, efficient power switching components. Maximum continuous drain current of 13 amperes ensures robust current handling.

Maximum drain-source voltage rating of 550 volts for high-voltage applications. Low on-resistance Rds of 280 milliohms minimizes conduction losses. Typical gate charge of 32.6 nanocoulombs optimizing switching performance.

Designed for through-hole mounting with a TO-220 package and 3 pins for easy PCB integration. Maximum power dissipation of 30.4 watts ensures reliable thermal performance. Operating temperature range from -40°C to 150°C for industrial environments.

Gate-source voltage tolerance from -30 to +30 volts allows safe gate operation. Dimensions are 16.15 mm height, 10.65 mm length, and 4.9 mm width. Forward voltage of 850 millivolts supports efficient conduction in switching circuits.

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