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Infineon OptiMOS 3 N-Channel MOSFET 180A 100V Enhancement Mode 7-Pin TO-263 IPB025N10N3GATMA1

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Infineon OptiMOS 3 N-Channel MOSFET 180A 100V Enhancement Mode 7-Pin TO-263 IPB025N10N3GATMA1

Name: Infineon OptiMOS 3 N-Channel MOSFET 180A 100V Enhancement Mode 7-Pin TO-263 IPB025N10N3GATMA1
Brand: Infineon
SKU: 129838
Price: 4.64 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.57mm
Length	10.31mm
Model	IPB025N10N3GATMA1
Width	9.45mm
Mount Type	Surface
Series	OptiMOS 3
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	7
Channel Type	N
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	4.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	155nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 GBrand	Infineon

Key Features

Features a maximum continuous drain current of 180 A for demanding power loads.
Operates with a maximum drain-source voltage of 100 V suitable for various power switching tasks.
Packaged in a 7-Pin TO-263 surface mount suitable for compact assembly.
Offers low on-resistance of 4.4 mΩ to reduce conduction losses.
Designed with an enhancement mode channel and a 1.2 V forward voltage.
Supports a maximum power dissipation of 300 W ensuring thermal robustness.
Operates reliably over a temperature range from -55°C to 175°C.
Typical gate charge is 155 nC at Vgs enhancing switching performance.

Product Description

Infineon IPB025N10N3GATMA1 belongs to the OptiMOS 3 series of N-Channel MOSFETs, engineered for high efficiency and power density in industrial and electronic applications. This MOSFET delivers a maximum continuous drain current of 180 A with a drain-source voltage rating of 100 V, making it ideal for power management and switching circuits in power supplies, motor controls, and battery management systems.

The device is housed in a compact 7-Pin TO-263 surface mount package providing ease of integration and excellent thermal dissipation. With an on-resistance of only 4.4 mΩ and a low forward voltage of 1.2 V, it ensures minimal power loss and improved operational efficiency.

This MOSFET is designed with an enhancement mode channel and can handle a maximum power dissipation up to 300 W, ensuring it can operate reliably in harsh environments with operating temperatures ranging from -55°C to 175°C. The typical gate charge of 155 nC at Vgs allows for fast switching and reduced electromagnetic interference.

The maximum gate-source voltage rating is ±20 V, providing robust gate protection under transient conditions. Physical dimensions are optimized for both manual and automated assembly with length 10.31 mm, width 9.45 mm, and height 4.57 mm.

Maximum continuous drain current of 180 A for high power applications. Drain-source voltage of 100 V provides versatile operating capability. Low on-resistance of 4.4 mΩ to improve efficiency. Compact 7-Pin TO-263 surface mount packaging.

Enhanced gate protection with ±20 V voltage tolerance. Wide operating temperature range from -55°C to 175°C. High power dissipation rating of 300 W for thermal robustness. Typical gate charge optimized at 155 nC for switching efficiency.

Physical dimensions suitable for integration into varied applications.

This Infineon MOSFET is suitable for industrial power electronics, automotive electronics, power supplies, motor drivers, and other demanding semiconductor applications. It provides reliability, efficiency, and ease of use in modern designs.

Explore more Infineon semiconductor products and OptiMOS series devices within the EnvMart marketplace for optimized power management solutions.

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Frequently Asked Questions

The maximum continuous drain current of this model is 180 A, making it suitable for high power applications.

This MOSFET operates with a maximum drain-source voltage of 100 V, allowing for versatile operating capabilities in various applications.

The on-resistance of this MOSFET is 4.4 mΩ, which helps to reduce conduction losses and improve efficiency.

It is packaged in a 7-Pin TO-263 surface mount configuration, which facilitates compact assembly and effective thermal dissipation.

The typical gate charge at Vgs for this model is 155 nC, enhancing its switching performance.

This MOSFET operates reliably over a temperature range from -55°C to 175°C, making it suitable for harsh environments.

It supports a maximum power dissipation of 300 W, ensuring thermal robustness during operation.

The maximum gate-source voltage rating for this MOSFET is ±20 V, providing robust gate protection under transient conditions.

The dimensions of this model are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.

This model is an N-channel MOSFET designed with an enhancement mode channel.

It is suitable for industrial power electronics, automotive electronics, power supplies, and motor drivers among other demanding semiconductor applications.

The country of origin for this MOSFET is India.