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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC320N20NS3GATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon BSC320N20NS3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-voltage enhancement mode transistor rated at 200 V drain-source voltage and 36 A continuous drain current. Packaged in a low-profile 8-pin TDSON surface-mount package with dimensions 6.1 mm width, 5.35 mm length, and 1.1 mm height, it is engineered for compact power conversion and switching applications in demanding thermal environments.
Designed for efficient power switching, this MOSFET features low on-resistance of 32 mΩ, which minimizes conduction losses during operation. The device supports a maximum power dissipation of 125 W and typical gate charge of 22 nC at Vgs, facilitating fast switching with optimized gate drive energy. It tolerates gate-source voltage from -20 V to +20 V, allowing flexible drive voltages.
The device operates reliably from a minimum temperature of -55°C up to a maximum of 150°C, suitable for harsh industrial and automotive thermal conditions. Its small footprint and low profile allow integration into compact assemblies, provided proper thermal pad design is implemented to dissipate heat effectively.
Applications include switch-mode power supplies in industrial systems, DC-DC converters requiring high-voltage switching capabilities, motor drive stages with significant current demands, power factor correction circuits in supplies, and telecoms and server power delivery modules.
High-voltage 200 V drain-source rating enables versatile power switching. 36 A continuous drain current supports substantial load demands. Low Rds(on) reduces conduction losses for energy-efficient operation. Robust thermal handling up to 150°C supports demanding environments.
Compact 8-pin TDSON package minimizes board space usage. Flexible gate drive voltage up to ±20 V. Wide temperature operation range from -55°C to 150°C. Typical gate charge of 22 nC allows efficient switching performance.
Ideal for industrial power conversion and telecom applications. Explore the extensive range of Infineon MOSFETs and semiconductor components on EnvMart for reliable and efficient electronic designs.
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