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Infineon OptiMOS 3 N-Channel MOSFET 80 A 60 V Enhancement Mode 3-Pin TO-220 IPP052N06L3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP052N06L3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- High performance OptiMOS 3 series ensures efficient power management.
- Enhancement mode operation suitable for switched mode power supplies.
- Low Rds(on) of 4.7 milliohms improves efficiency and reduces heat loss.
- Maximum power dissipation rating of 115 W supports high power applications.
- Wide gate-source voltage range from -20 V to +20 V enhances flexibility.
- Fast switching and optimized gate charge improve system performance.
- Package designed for through-hole mounting facilitates easy PCB integration.
- Robust operating temperature range from -55°C to 175°C for industrial use.
Product Description
Infineon IPP052N06L3GXKSA1 OptiMOS 3 N-Channel MOSFET is engineered for high efficiency and high power density in electronic applications. It supports a maximum continuous drain current of 80 A and a drain-source voltage of 60 V, making it well-suited for robust power switching and regulation tasks.
This device uses enhancement mode operation and features very low on-resistance of 4.7 milliohms, minimizing conduction losses and improving energy efficiency in circuits. The 3-pin TO-220 package allows through-hole mounting, which is favored for reliability and ease of assembly in industrial and consumer electronics.
The MOSFET can dissipate up to 115 W of power, supporting demanding applications such as DC/DC converters, power supplies, and motor drives. Its gate-source voltage capability ranges from -20 V to +20 V, offering design flexibility. The typical gate charge of 37 nanocoulombs ensures rapid switching performance, important for modern high-frequency power electronics.
Operating temperature range from -55°C to 175°C makes this MOSFET suitable for harsh industrial, automotive, and embedded applications. The compact size of 10.36 mm length, 4.57 mm width, and 15.95 mm height facilitates integration into constrained spaces.
High efficiency and low loss enhanced MOSFET technology. Robust thermal handling and high power dissipation capability. Optimized for switched mode power supplies and voltage regulation. Industrial-grade operating temperature tolerances.
Reliable TO-220 through-hole package for stable physical mounting.
This MOSFET is a prime choice for engineers seeking dependable and efficient power switching components. It is widely used in industrial, laboratory, manufacturing, and electronics design contexts. Browse EnvMart for more advanced power semiconductor solutions to meet your project requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
It can handle a maximum drain-source voltage of 60 V.
The on-resistance (Rds(on)) of this MOSFET is 4.7 milliohms.
The maximum power dissipation rating is 115 W.
This model comes in a TO-220 package and is designed for through-hole mounting.
The typical gate charge is 37 nanocoulombs.
The operating temperature range is from -55°C to 175°C.
The gate-source voltage range is from -20 V to +20 V.
Enhancement mode operation allows for efficient power management and is suitable for switched mode power supplies.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 15.95 mm in height.
It is commonly used in applications such as DC/DC converters, power supplies, and motor drives.
This MOSFET has an N-channel type.
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