Infineon CoolMOS P7 Type N-Channel MOSFET 8 A 800 V Enhancement 3-Pin SOT-223 IPN80R600P7ATMA1

Infineon IPN80R600P7ATMA1 is a CoolMOS P7 Type N-Channel MOSFET designed for high efficiency and thermal performance in flyback converters and power applications. It is housed in a compact 3-Pin SOT-223 surface-mount package and rated for a continuous drain current of 8 A and a drain-source voltage of 800 V. This device is ideal for applications including adapters, chargers, LED drivers, audio switching mode power supplies, AUX power, and various industrial power systems.

Compared to previous generation devices and competitor MOSFETs, it provides up to 0.6% better efficiency and reduces MOSFET operating temperatures by 2°C to 8°C in typical flyback circuits. These benefits enable designs with higher power density and reduced cooling requirements. The device also assists in reducing bill of materials cost and simplifying assembly processes due to the surface mount SOT-223 packaging.

With a maximum gate-source voltage rating of ±20 V and a typical gate charge of 20 nC, it supports easy drive and switching. The maximum power dissipation is 7.4 W. It operates over a wide temperature range from -55°C minimum to 150°C maximum, ensuring reliable operation in demanding industrial environments.

The MOSFET features a low forward voltage drop of 0.9 V and a maximum R DS(on) of 600 mΩ, contributing to energy savings during conduction phases. Its 3-pin configuration provides straightforward integration into power conversion circuits.

Infineon's CoolMOS P7 family improves ESD robustness, resulting in better manufacturing yield and fewer customer returns. The product aids designers in fine-tuning their circuits with reliable, high-performance switching devices.

Specifically designed for adapter, charger, and LED driver flyback applications. Up to 0.6% efficiency improvement and lower device temperature compared to predecessors. Compact 3-Pin SOT-223 surface mount package for ease of assembly.

Maximum continuous drain current of 8 A and drain-source voltage of 800 V. Low gate charge and forward voltage optimize switching performance. Wide operating temperature range from -55°C to 150°C. Enhanced ESD robustness for increased production yield and reliability.

Ideal for industrial, commercial power supply, and LED lighting applications. Supports higher power density designs with reduced BOM costs. Explore more power semiconductor devices and components at EnvMart for your industrial and commercial electronics needs.