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Infineon CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPA60R060P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R060P7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 48A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
Key Features
- Supports a maximum continuous drain current of 48 A for substantial load handling.
- Rated for a maximum drain-source voltage of 600 V suitable for high-voltage circuits.
- Utilizes enhancement mode for gate-controlled conduction.
- Mounted in a 3-pin TO-220 package for through-hole mounting with effective heat dissipation.
- Features low on-resistance of 60 mΩ to minimize conduction losses.
- Allows maximum gate-source voltage of 30 V to accommodate common gate drive voltages.
- Capable of dissipating up to 29 W power under normal thermal loading.
- Operates reliably within the temperature range of −55 °C to +150 °C.
Product Description
Infineon IPA60R060P7XKSA1 CoolMOS P7 Type N-Channel MOSFET is a high-voltage transistor engineered for switching and power conversion in demanding through-hole assemblies. It supports continuous drain currents up to 48 A and operates at drain-source voltages as high as 600 V, making it suitable for industrial motor drives, power supplies, and LED driver circuits.
This enhancement-mode MOSFET is supplied in a 3-pin TO-220 package which facilitates effective through-hole mounting and heatsinking. The device features a low drain-source on-resistance of 60 mΩ which minimizes conduction losses, enhancing energy efficiency during operation.
Its capability of dissipating 29 W of power allows for sustained thermal loading, and it withstands extended temperature ranges from −55 °C to +150 °C, ensuring reliability in harsh environments. The gate-source voltage limit is 30 V, enabling compatibility with standard gate drive voltages in power electronics.
Applications include high-voltage power supplies, industrial motor drives, LED lighting systems, and test bench power electronics. The robust thermal and electrical specifications make it a versatile component for demanding industrial and laboratory settings.
Supports continuous drain current up to 48 A. Rated for a high drain-source voltage of 600 V. Utilizes enhancement channel mode for precise current control. Low on-resistance of 60 mΩ for reduced losses. Package type is 3-pin TO-220 suitable for through-hole mounting.
Power dissipation capability of 29 W enables sustained thermal load. Operates safely between −55 °C and +150 °C. Maximum gate-source voltage of 30 V. Ideal for industrial, laboratory, and test-bench power electronics applications.
This MOSFET is a reliable component for high-voltage switching tasks and power conversion challenges found in industrial and commercial electrical engineering. Browse the category of MOSFETs at EnvMart to find more components suitable for semiconductor applications and power electronics projects.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 48 A, making it suitable for substantial load handling in various applications.
It is rated for a maximum drain-source voltage of 600 V, which is suitable for high-voltage circuits.
This unit is supplied in a 3-pin TO-220 package, designed for through-hole mounting with effective heat dissipation.
The device features a low on-resistance of 60 mΩ, which minimizes conduction losses during operation.
It is capable of dissipating up to 29 W of power under normal thermal loading, allowing for sustained operation.
This MOSFET operates reliably within a temperature range of −55 °C to +150 °C, ensuring performance in harsh environments.
The maximum gate-source voltage for this model is 30 V, accommodating common gate drive voltages in power electronics.
It is suitable for applications such as high-voltage power supplies, industrial motor drives, LED lighting systems, and test bench power electronics.
This model utilizes an enhancement mode for gate-controlled conduction, which allows for precise current control.
The country of origin for this MOSFET is India.
The robust thermal specifications, including a power dissipation capability of 29 W, make it versatile for demanding industrial and laboratory settings.
This model has a pin count of 3, which corresponds to its TO-220 package design.
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