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onsemi P-Channel MOSFET, 8-Pin SOIC, 8.8 A, 30 V Enhancement Mode FDS4435BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4435BZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | FDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- This mosfet operates in enhancement mode with a channel type of P.
- The device supports a typical gate charge of 29 nC at Vgs with a maximum gate-source voltage range of -25 to +25 V.
- It has a low maximum drain-source resistance of 20 mΩ ensuring efficient conduction.
- Designed for surface mount applications, the MOSFET offers high power dissipation of 2.5 W and operates up to 150°C.
- Compact dimensions include 5 mm length, 4 mm width, and 1.5 mm height suitable for tight board space.
- The device is RoHS compliant and free from automotive standard certifications.
Product Description
onsemi FDS4435BZ P-Channel MOSFET in an 8-pin SOIC package is designed for enhanced power management and switching applications in electronics and electrical systems. With a maximum continuous drain current rating of 8.8 A and a drain-source voltage of 30 V, it is ideal for low-voltage, high-efficiency power conversion circuits.
The device operates in enhancement mode, offering reliable switching with a low on-resistance of 20 mΩ which reduces power loss and improves thermal performance. The typical gate charge of 29 nC at Vgs ensures rapid switching speed, important for high-frequency applications.
Surface mount technology (SMT) compatibility provides a compact and efficient footprint of 5 mm x 4 mm x 1.5 mm, suited for dense printed circuit boards (PCB). The MOSFET maintains stable performance within an operating temperature range from -55°C to 150°C, supporting a broad spectrum of industrial, automotive (non-certified), and consumer electronics environments.
Its capability to dissipate a maximum of 2.5 W power allows for robust usage in power regulation, load switching, and motor control applications. The device carries no specific automotive standards, focusing on general semiconductor requirements.
This MOSFET is a trusted choice for power management and switching components in commercial HVAC systems, manufacturing equipment, laboratory devices, and industrial electronic controls.
This mosfet operates in enhancement mode with a channel type of P. The device supports a typical gate charge of 29 nC at Vgs with a maximum gate-source voltage range of -25 to +25 V. It has a low maximum drain-source resistance of 20 mΩ ensuring efficient conduction.
Designed for surface mount applications, the MOSFET offers high power dissipation of 2.5 W and operates up to 150°C. Compact dimensions include 5 mm length, 4 mm width, and 1.5 mm height suitable for tight board space. The device is RoHS compliant and free from automotive standard certifications.
Discover more on MOSFETs and related semiconductor components with onsemi and explore EnvMart's extensive catalog for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 A.
It has a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs is 29 nC.
This model can dissipate a maximum of 2.5 W of power.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage range is -25 to +25 V.
The maximum drain-source resistance is 20 mΩ.
It operates within a temperature range of -55°C to 150°C.
This model is designed for surface mount applications.
The channel type of the FDS4435BZ is P-channel.
Yes, this MOSFET is RoHS compliant.
It comes in an 8-pin SOIC package type.
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