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Vishay N-Channel MOSFET Power Transistor, 14 A, 250 V, Enhancement Mode, TO-263 Package IRF644SPBF

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Vishay N-Channel MOSFET Power Transistor, 14 A, 250 V, Enhancement Mode, TO-263 Package IRF644SPBF

Name: Vishay N-Channel MOSFET Power Transistor, 14 A, 250 V, Enhancement Mode, TO-263 Package IRF644SPBF
Brand: Vishay
SKU: 196599
Price: 1.41 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.83mm
Length	10.67mm
Model	IRF644SPBF
Width	9.65mm
Mount Type	Surface
Series	IRF
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	14A
Maximum Drain Source Voltage Vds	250V
Maximum Drain Source Resistance Rds	280mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.1W
Typical Gate Charge Qg @ Vgs	68nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.8V
N-channel MOSFET,IRF644S 14A 250VBrand	Vishay

Key Features

This MOSFET operates in enhancement mode with a drain-source resistance of 280 milliohms.
It supports maximum power dissipation of 3.1 W ensuring reliable thermal performance.
The device has a forward voltage drop of 1.8 V for efficient conduction.
It is rated for gate-source voltage up to ±20 V and typical gate charge of 68 nC at Vgs.
Operational temperature range spans from -55°C to 150°C delivering wide thermal tolerance.
Compact TO-263 package with dimensions 10.67 mm length, 9.65 mm width, and 4.83 mm height allows easy PCB integration.
Surface mount type with 3 pins for standard N-channel MOSFET applications.

Product Description

Vishay IRF644SPBF is a high-performance N-Channel MOSFET power transistor engineered for switching and amplification applications in electronic circuits. It features a robust maximum continuous drain current of 14 Amperes and a drain-source voltage rating of 250 Volts, suitable for various power management and control systems.

This device operates in enhancement mode with a low maximum drain-source resistance of 280 milliohms, minimizing conduction losses and thermal stress. The maximum power dissipation capability of 3.1 Watts ensures effective heat handling in demanding environments.

The TO-263 surface-mount package offers a compact form factor with pins optimized for secure and reliable PCB mounting. Operating temperature range from -55°C to 150°C supports usage across automotive, industrial, and consumer electronics. The typical gate charge of 68 nanocoulombs at gate-source voltage facilitates rapid switching speeds, essential in power converters and driver circuitry.

Key technical features include a forward voltage of 1.8 Volts, gate-source voltage tolerance of minus 20 to plus 20 Volts, and a 3-pin configuration for straightforward integration into electronic designs.

Due to its electrical and thermal specifications, this MOSFET is well suited for industrial power systems, consumer electronics, HVAC controls, and various switching applications in manufacturing environments.

This MOSFET operates in enhancement mode with a drain-source resistance of 280 milliohms. It supports maximum power dissipation of 3.1 W ensuring reliable thermal performance. The device has a forward voltage drop of 1.8 V for efficient conduction.

It is rated for gate-source voltage up to ±20 V and typical gate charge of 68 nC at Vgs. Operational temperature range spans from -55°C to 150°C delivering wide thermal tolerance. Compact TO-263 package with dimensions 10.67 mm length, 9.65 mm width, and 4.83 mm height allows easy PCB integration.

Surface mount type with 3 pins for standard N-channel MOSFET applications. Explore the full range of Vishay semiconductor components and MOSFET solutions on EnvMart to enhance your electronic designs with high-quality power devices.