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onsemi 1 Darlington Transistor PNP 5A 100V HFE 1000 3-Pin TO-220 TIP127G

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onsemi 1 Darlington Transistor PNP 5A 100V HFE 1000 3-Pin TO-220 TIP127G

Name: onsemi 1 Darlington Transistor PNP 5A 100V HFE 1000 3-Pin TO-220 TIP127G
Brand: onsemi
SKU: 196963
Price: 0.94 USD
Availability: InStock

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	Vietnam
Brand	onsemi
Height	9.28mm
Length	10.28mm
Model	TIP127G
Mount Type	Through Hole
Series	TIP127
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	5A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	1000
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.2mA
Maximum Power Dissipation Pd	65W
PNP darlington transistor,TIP127 8ABrand	ON Semiconductor
onsemi 1 Darlington Transistor PNP, 5 A 100 V HFE	1000, 3-Pin TO-220

Key Features

High DC current gain with hFE of 1000.
Maximum collector current of 5A for robust load handling.
Collector-emitter voltage rating of 100V supporting high voltage applications.
Low collector-emitter saturation voltage for efficient switching.
Plastic TO-220 package suitable for through hole mounting.
Built-in base emitter shunt resistor for improved stability.
Operating temperature range from -65°C to 150°C for versatile usage.
Compact design with dimensions 10.28mm length and 9.28mm height.

Product Description

The onsemi TIP127G is a PNP Darlington bipolar power transistor featuring a maximum continuous collector current of 5 amperes and a collector-emitter voltage rating of 100 volts. It comes in a durable plastic TO-220AB through-hole package with 3 pins, suitable for various electronic and power amplification applications.

This transistor offers a high DC current gain (hFE) of 1000, allowing efficient amplification with low input current. It includes a built-in base-emitter shunt resistor which stabilizes operation, reducing the risk of oscillations in circuits.

Its maximum power dissipation rating is 65 watts, enabling the TIP127G to handle significant load power in demanding environments. The transistor boasts a low collector-emitter saturation voltage of 2 volts, contributing to improved efficiency in switching and amplification roles.

The device can operate reliably over a wide temperature range from -65°C to 150°C, making it ideal for industrial and commercial electronics, automotive, and power control systems. Its compact dimensions (height 9.28 mm, length 10.28 mm) facilitate easy integration into densely packed circuit boards.

This transistor is commonly employed as an output device in general-purpose amplifier applications across industrial, laboratory, and manufacturing settings. The plastic TO-220 package supports through-hole mounting for secure and easy installation.

High DC current gain with hFE of 1000. Maximum collector current of 5A for robust load handling. Collector-emitter voltage rating of 100V supporting high voltage applications. Low collector-emitter saturation voltage for efficient switching.

Built-in base emitter shunt resistor for improved stability. Plastic TO-220 package suitable for through hole mounting. Operating temperature from -65°C to 150°C for versatile industrial use. Compact dimensions for easy PCB layout integration.

Maximum power dissipation of 65W allowing heavy load applications. PNP transistor polarity designed for power amplification tasks. Country of origin: Vietnam. Explore more semiconductors and Darlington Transistors in the Electronics & Electricals category on EnvMart.