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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZTX601B |
| Mount Type | Through Hole |
| Series | ZTX601B |
| Maximum Operating Temperature | 200°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 180V |
| Maximum Collector Cut-off Current | 0.00001mA |
| Maximum Power Dissipation Pd | 1W |
| DiodesZetex 1 Darlington Transistor NPN, 1 A 160 V HFE | 5000, 3-Pin E-Line |
DiodesZetex ZTX601B is a high-performance NPN Darlington transistor designed for efficient switching and amplification applications. Featuring a maximum continuous collector current of 1 ampere and a collector-emitter voltage of 160 volts, this transistor offers robust electrical characteristics in a compact 3-pin E-Line package suitable for through-hole mounting.
The device delivers a minimum DC current gain (hFE) of 5000, making it ideal for applications requiring high gain amplification. Its maximum power dissipation rating of 1 watt allows safe operation in low power circuits, while its high maximum collector-base voltage of 180 volts ensures enhanced durability and reliability.
Built to withstand harsh environments, the ZTX601B operates reliably within a wide temperature range from -55°C to 200°C. The transistor's small physical dimensions of 4.77 mm in length and 4.01 mm in height facilitate compact PCB layouts.
This NPN transistor features a single element per chip and demonstrates low cut-off collector current of 0.00001 mA, ensuring minimal leakage current and efficient switching. It is widely applicable in industrial, electronic, and power management circuits, offering dependable performance in various semiconductor implementations.
Maximum continuous collector current of 1A supports diverse power handling needs. High gain (hFE) of 5000 for superior amplification in switching circuits. 3-pin E-Line package facilitates through-hole PCB mounting compatibility.
Wide operating temperature range from -55°C to 200°C enables industrial reliability. Maximum voltage ratings of 160V (collector-emitter) and 180V (collector-base) assure robustness. Low collector cut-off current reduces leakage, enhancing energy efficiency.
Compact size aids in dense circuit designs requiring miniature components.
This transistor is part of the DiodesZetex series, trusted in electronics manufacturing and embedded system designs. Its performance and durability make it suitable for semiconductor discrete component applications, such as amplification, switching, and signal processing in industrial and laboratory environments.
Explore more components in the Darlington Transistor category at EnvMart for reliable semiconductor solutions.
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