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DiodesZetex Darlington Transistor NPN 900 mA 100 V HFE 5000 3-Pin SOT-23 FMMT634TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | FMMT634TA |
| Mount Type | Surface |
| Series | FMMT634 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 900mA |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 12V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Collector Cut-off Current | 0.00001mA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 625mW |
| DiodesZetex 1 Darlington Transistor NPN, 900 mA 100 V HFE | 5000, 3-Pin SOT-23 |
Key Features
- Maximum continuous collector current is 900 mA.
- Maximum collector emitter voltage rated at 100 V.
- Transistor has a high DC current gain (hFE) of 5000.
- Surface mounted in compact 3-pin SOT-23 package for PCB applications.
- Operates within the temperature range -55°C to 150°C.
- Maximum power dissipation is 625 mW, suitable for low power switching.
- Automotive standard compliant with AEC-Q101 certification.
- Maximum emitter base voltage is 12 V, and collector base voltage is 120 V.
Product Description
DiodesZetex FMMT634TA is a high-performance NPN Darlington transistor designed for efficient switching and amplification with a maximum continuous collector current of 900 mA and maximum collector emitter voltage of 100 V. Packaged in a compact 3-Pin SOT-23 surface mount device, it is ideal for modern electronic circuit boards requiring reliable, small form factor components.
This transistor offers an exceptionally high DC current gain (hFE) of 5000, enabling low input current control with significant amplification. It supports wide operating temperatures from -55°C up to 150°C, making it suitable for demanding automotive and industrial applications.
The maximum power dissipation is 625 mW, designed to handle modest power levels efficiently while maintaining thermal stability. The device also complies with automotive standards, featuring AEC-Q101 certification for enhanced reliability in automotive environments.
The small dimensions, including a chip length of 3.05 mm and height of 1 mm, enable compact board design without sacrificing robust electrical characteristics. This transistor operates with maximum emitter base voltage of 12 V and collector base voltage of 120 V to ensure safe operation within specified electrical limits.
Maximum continuous collector current: 900 mA. Maximum collector emitter voltage: 100 V. Minimum DC current gain (hFE): 5000. Package type: 3-Pin SOT-23 surface mount. Operating temperature range: -55°C to 150°C. Maximum power dissipation: 625 mW.
Automotive standard: AEC-Q101 certified. Maximum emitter base voltage: 12 V. Maximum collector base voltage: 120 V. Compact size for electronic PCB designs.
This Darlington Transistor is widely used in automotive electronics, industrial control circuits, power amplification, and other semiconductor applications. It offers a reliable solution for designers needing high gain and durability for surface mount devices.
Explore our Electronics & Electricals category for further semiconductor and transistor options on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this model is 900 mA.
This transistor has a maximum collector-emitter voltage of 100 V.
The minimum DC current gain (hFE) for this model is 5000.
The dimensions of the SOT-23 package are 3.05 mm in length and 1 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is 625 mW.
The maximum emitter-base voltage for this transistor is 12 V.
The maximum collector-base voltage is 120 V.
The FMMT634TA is an NPN Darlington transistor.
Yes, it is compliant with the AEC-Q101 automotive standard.
This model uses a surface mount type in a 3-pin configuration.
There is 1 element per chip in this transistor.
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