onsemi Darlington Bipolar Power Transistor 30 A NPN 250 V 3-Pin TO-218 MJH11020G

onsemi MJH11020G is a Darlington Bipolar Power Transistor featuring 30 A maximum DC collector current and a maximum collector-emitter voltage of 250 V. This NPN transistor in a 3-Pin TO-218 package is designed for use in general purpose amplifier circuits, low frequency switching, and motor control.

The device provides a low collector-emitter saturation voltage of typically 1.2 V at 5 A and 1.8 V at 10 A collector current, enabling energy efficient switching performance. It supports high power dissipation up to 150 W and operates reliably over a wide thermal range from -65°C to 150°C, making it suitable for demanding industrial environments.

Manufactured using monolithic construction, this transistor features a through-hole mount type, with physical dimensions of height 33.15 mm, length 16.26 mm, and width 5.3 mm. The transistor configuration is single, with a minimum DC current gain of 100.

The MJH11020G is built for robust performance in applications such as industrial motor drives, power amplifiers, and high current switches. Its rugged TO-218 package facilitates effective heat dissipation, enhancing long-term reliability.

Maximum DC collector current: 30 A. Maximum collector-emitter voltage: 250 V. Low collector-emitter saturation voltage (VCE(sat)): 1.2 V at 5 A typical. Power dissipation: 150 W maximum. Operating temperature range: -65°C to 150°C.

3-Pin TO-218 package with through-hole mount. High DC current gain: hFE minimum 100.

This transistor is made in China and complies with typical industrial semiconductor standards but does not carry specific automotive certifications. Ideal for use in laboratories, industrial control systems, and power electronics.

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