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onsemi Darlington Transistor PNP 8A 100V TO-252 Surface Mount 3-Pin MJD127T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD127T4G |
| Mount Type | Surface |
| Series | MJD122 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.01mA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi 1 Darlington Transistor PNP, 8 A 100 V HFE | 100, 3-Pin DPAK |
Key Features
- PNP Darlington transistor designed for high-current handling up to 8A.
- Rated at a maximum collector-emitter voltage of 100V for robust power switching.
- Surface-mount TO-252 package with 3-pin configuration for efficient PCB assembly.
- Provides high current gain with minimum hFE of 100 for reliable amplification.
- Suitable for automotive, industrial, and general electronics applications.
- Maximum power dissipation of 20W enables reliable operation under demanding loads.
- Operating temperature range from -65°C to 150°C for extended environmental resilience.
Product Description
onsemi MJD127T4G is a high-performance PNP Darlington transistor, engineered for demanding power and switching applications. Designed for surface-mount PCBs, this device features a TO-252 package and robust 3-pin configuration, making it ideal for automated production environments.
With a maximum continuous collector current of 8A and a maximum collector-emitter voltage of 100V, the MJD127T4G meets the needs of power electronics, motor drivers, and industrial control systems. Its Darlington architecture delivers a minimum DC current gain (hFE) of 100, enabling efficient signal amplification and switching with low input current requirements.
The transistor's TO-252 packaging allows for efficient heat dissipation, ensuring a maximum power handling capability of 20W. Its operating temperature range extends from -65°C to 150°C, making it well-suited for automotive and industrial settings where reliability under harsh conditions is critical. The device holds an automotive qualification per AEC-Q101 standard, reinforcing its suitability for automotive and commercial power switching tasks.
Additional features include surface-mount compatibility, maximum emitter-base voltage of 5V, and collector base voltage rated up to 100V. The collector-emitter saturation voltage is limited to 2V, enhancing switching efficiency and energy conservation. Its low collector cut-off current (0.01mA maximum) ensures stable operation in sensitive applications.
With compact physical dimensions of 6.73mm length and 2.38mm height, the MJD127T4G is easy to integrate into densely populated circuit boards. The transistor contains a single element per chip and offers application flexibility across automotive, industrial, and consumer electronics sectors.
Provides reliable high-current switching for DC motor control, relay drivers, and power regulators. Automotive-qualified for use in vehicles and transport systems requiring robust electronic controls. Suited for industrial automation, power management, and surface-mount PCB layouts.
Efficient heat dissipation in TO-252 package for improved thermal performance. Works across extended temperature ranges for deployment in harsh environments. Explore additional Darlington Transistors and surface-mount power solutions in the EnvMart electronics and semiconductor catalog.
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Frequently Asked Questions
The MJD127T4G has a maximum continuous collector current of 8A, making it suitable for high-current applications.
This model is rated for a maximum collector-emitter voltage of 100V, allowing it to handle robust power switching tasks.
The transistor comes in a TO-252 surface-mount package, which is designed for efficient PCB assembly.
The MJD127T4G provides a minimum DC current gain (hFE) of 100, facilitating efficient signal amplification.
This transistor can handle a maximum power dissipation of 20W, ensuring reliable operation under demanding loads.
It features a 3-pin configuration, which is standard for TO-252 surface-mount devices.
The MJD127T4G is qualified according to the AEC-Q101 standard, making it suitable for automotive applications.
The maximum collector-emitter saturation voltage for this model is limited to 2V, enhancing switching efficiency.
The maximum emitter-base voltage (VEBO) for this transistor is rated at 5V, ensuring stable operation in sensitive applications.
The transistor has dimensions of 6.73mm in length and 2.38mm in height, allowing for easy integration into circuit boards.
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