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onsemi Darlington Transistor NPN, 8A, 100V, TO-252, Surface Mount, MJD122T4G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model MJD122T4G
Mount Type Surface
Series MJD122
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.01mA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
onsemi MJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE 100, 3-Pin DPAK

Key Features

  • Capable of continuous collector current up to 8A.
  • Maximum collector emitter voltage of 100V for robust switching.
  • TO-252 package and surface mount configuration for PCB integration.
  • High DC current gain with minimum hFE of 100 enhances amplification performance.
  • Reliable NPN Darlington pair suitable for automotive and industrial applications.
  • Operates across wide temperature range from −65°C to 150°C.
  • Maximum power dissipation rated at 20W for demanding loads.
  • AEC-Q101 automotive qualification for high reliability environments.

Product Description

onsemi MJD122T4G Darlington Transistor delivers robust NPN performance with a continuous collector current rating of 8A and collector emitter voltage tolerance up to 100V. Designed for demanding circuit applications, this TO-252 surface mount transistor is ideal for PCB design and allows efficient switching and amplification in control and power circuits.

Featuring a high minimum DC current gain (hFE) of 100, the MJD122T4G ensures strong signal amplification and is well-suited for industrial, automotive, and power electronics where high gain is essential. Its NPN Darlington configuration increases input impedance while maintaining high output current capacity, making it reliable in driving loads or actuation circuits.

With maximum power dissipation set at 20W and an operating temperature range spanning −65°C to 150°C, this transistor offers flexibility and durability in both low-temperature and high-heat environments. Its maximum collector emitter saturation voltage is rated at 2V, and maximum emitter base voltage stands at 5V, all facilitating stability under various loads.

The TO-252 package type ensures compatibility with automated surface mount assembly lines and offers compact PCB footprint. Three pins allow simple integration, and the single element per chip design simplifies circuit implementation for designers. Automotive AEC-Q101 qualification confirms trustworthiness for critical vehicle and transportation systems.

Applications include industrial control, automotive electronics, relay drivers, solenoid control, output amplifiers, motor drives, and power management circuits. The MJD122T4G is a fundamental component in the assembly of reliable and efficient electronic devices where size, durability, and electrical performance are priorities.

Capable of continuous collector current up to 8A. Maximum collector emitter voltage of 100V for robust switching. TO-252 package and surface mount configuration for PCB integration. High DC current gain with minimum hFE of 100 enhances amplification performance.

Reliable NPN Darlington pair suitable for automotive and industrial applications. Operates across wide temperature range from −65°C to 150°C. Maximum power dissipation rated at 20W for demanding loads. AEC-Q101 automotive qualification for high reliability environments.

Browse more Darlington Transistor solutions from onsemi and related semiconductor categories at EnvMart to optimize your power and control circuit design needs.

onsemi Darlington Transistor NPN, 8A, 100V, TO-252, Surface Mount, MJD122T4G
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Frequently Asked Questions

The MJD122T4G can handle a maximum continuous collector current of 8A.

It has a maximum collector emitter voltage rating of 100V, suitable for robust switching applications.

This model comes in a TO-252 package, designed for surface mount applications.

The MJD122T4G operates across a wide temperature range from −65°C to 150°C.

It features a minimum DC current gain (hFE) of 100, enhancing its amplification performance.

The maximum power dissipation for the MJD122T4G is rated at 20W, accommodating demanding loads.

This transistor has a pin count of 3, facilitating simple integration into circuits.

The maximum emitter base voltage (VEBO) for the MJD122T4G is rated at 5V.

It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum collector emitter saturation voltage (VceSAT) is rated at 2V.

The MJD122T4G is manufactured in India.

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