Infineon OptiMOS N-Channel MOSFET 190 mA Continuous Drain Current 100 V Maximum Drain Source Voltage 3-Pin BSS119NH6327XTSA1

The Infineon BSS119NH6327XTSA1 is a high-reliability N-Channel MOSFET from the OptiMOS series, designed for compact electronic assemblies and surface-mount applications. This device offers a maximum continuous drain current of 190 mA and a maximum drain-source voltage of 100 V, making it ideal for switching and amplification tasks in low-power circuits.

Encased in a three-pin SOT-23 package measuring 2.9 mm in length, 1.3 mm in width, and 1 mm in height, the MOSFET facilitates dense PCB layouts and automated assembly processes. The enhancement mode channel supports operation with a gate-source voltage tolerance ranging from -20 V to +20 V, ensuring versatility across various gate-drive voltages.

This MOSFET has a low maximum drain-source resistance of 10 Ω, which helps reduce conduction losses in small load applications. It also features a typical forward voltage of 800 mV and a gate charge of only 0.6 nC, which allows improved switching efficiency with minimal drive energy. The device can safely dissipate up to 500 mW of power, maintaining thermal management in compact setups.

Rated for operation over a wide temperature range from -55°C to 150°C, the BSS119NH6327XTSA1 meets automotive-grade standards, specifically the AEC-Q101 certification, making it suitable for automotive sensor signal switching and control functions. Its robustness also makes it a favorable choice for general-purpose low-current power management, battery monitoring circuits, and small-signal high-voltage level shifting in commercial and industrial applications.

The MOSFET is surface-mounted, optimized for use with standard pick-and-place PCB assembly techniques, enabling efficient manufacturing of electronic equipment for water treatment, HVAC control, industrial automation, and more.

Optimized surface-mount 3-pin SOT-23 package for compact designs. 190 mA continuous drain current with 100 V maximum voltage rating. Low on-resistance of 10 Ω reduces conduction losses. Wide operating temperature range suitable for automotive environments.

Typical gate charge of 0.6 nC enables fast switching. Certified to AEC-Q101 automotive standard for reliability. Ideal for sensor signal switching, power management, and level shifting. Supports battery monitoring and low-power converter gate drivers.

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