Infineon CoolMOS P7 N-Channel MOSFET 12.5 A 700 V Enhancement Mode 3-Pin TO-251 IPS70R360P7SAKMA1

Infineon IPS70R360P7SAKMA1 CoolMOS P7 N-Channel MOSFET provides a high-performance solution for power switching applications requiring up to 12.5 A continuous drain current and blocking voltages of 700 V. Encapsulated in a compact 3-pin TO-251 package, this enhancement mode MOSFET offers excellent electrical characteristics tailored for efficiency and thermal management.

The CoolMOS P7 technology uses super junction principles to achieve extremely low losses, reflected in its low RDS(on) of 360 milliohms and efficient switching capabilities with a typical gate charge of 16.4 nC. This ensures minimal power dissipation and improved thermal performance, making it suitable for power adapters, chargers, lighting, TVs, and automotive electronics.

Designed for through-hole mounting, it allows robust mechanical and thermal handling with a maximum power dissipation rating of 53 watts. The device is qualified to automotive standard AEC-Q101, ensuring reliability under harsh environmental conditions. Its operating temperature range spans from -40°C to 150°C, permitting use in a wide variety of industrial and automotive environments.

Additional technical features include integrated ESD protection, a maximum gate-source voltage of 20 V, and a forward voltage of 900 mV, which together optimize device robustness and conduction efficiency. The compact physical dimensions facilitate slim and space-efficient product designs.

This MOSFET uses enhancement mode channel for efficient switching. Features low drain-source resistance of 360 milliohms for minimal conduction losses. Supports high maximum power dissipation of 53 watts. Operates safely in temperatures from -40°C up to 150°C.

Includes integrated ESD protection diode for robust reliability. Typical gate charge at 16.4 nC allows optimized switching performance. Complies with automotive standard AEC-Q101, suitable for automotive applications. Compact dimensions: 9.82 mm height, 6.73 mm length, and 2.4 mm width.

Designed for through-hole mounting in power and consumer electronics. Offers a forward voltage of 900 mV for optimized conduction losses.

This product is ideal for industrial, automotive, consumer electronics, and power management applications requiring high efficiency and durability. Explore our semiconductor category for a wide range of power and discrete MOSFETs suitable for your design needs.