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IXYS HiperFET Polar N-Channel MOSFET 120A 200V Enhancement Mode 3-Pin TO-247 IXFH120N20P

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IXYS HiperFET Polar N-Channel MOSFET 120A 200V Enhancement Mode 3-Pin TO-247 IXFH120N20P

Name: IXYS HiperFET Polar N-Channel MOSFET 120A 200V Enhancement Mode 3-Pin TO-247 IXFH120N20P
Brand: IXYS
SKU: 148351
Price: 14.41 USD
Availability: InStock

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Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH120N20P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	22mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	714W
Typical Gate Charge Qg @ Vgs	152nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

Designed with enhancement mode for efficient switching performance.
Features a low maximum drain-source resistance of 22 milliohms.
Supports a maximum power dissipation of 714 watts for high power applications.
Operates reliably between -55°C and 175°C maximum temperature.
Includes fast intrinsic diode for improved switching efficiency.
Typical gate charge is 152 nanocoulombs, enabling fast gate transitions.
Maximum gate-source voltage rating is ±20 volts ensuring robust control.
Compact dimensions of 21.46mm height, 16.26mm length, and 5.3mm width.

Product Description

The IXYS IXFH120N20P is a high-performance N-Channel Power MOSFET designed with IXYS HiperFET Polar technology for enhanced fast switching and low losses. It provides a maximum continuous drain current of 120 amperes and can withstand a maximum drain-source voltage of 200 volts, making it suitable for demanding power electronic circuits.

This enhancement mode device is housed in a 3-Pin TO-247 package with through-hole mounting, offering robust mechanical and electrical characteristics. Its low on-resistance of 22 milliohms minimizes conduction losses, while a maximum power dissipation of 714 watts allows efficient heat management in industrial environments.

The MOSFET supports operation in a wide temperature range from -55°C up to a maximum of 175°C, suitable for harsh operating conditions. It features a typical gate charge of 152 nanocoulombs and can tolerate gate-source voltages between -20 and +20 volts, facilitating precise and reliable switching control.

Compact physical dimensions (21.46 mm height, 16.26 mm length, and 5.3 mm width) contribute to flexible PCB layout design. Incorporated fast intrinsic diode functionality further enhances switching performance and efficiency, ideal for applications such as motor drives, power supplies, inverters, and industrial automation.

This IXYS Power MOSFET is tailored for industrial, laboratory, and commercial uses where high power handling and reliability are critical. Its TO-247 package allows straightforward integration into existing hardware designs, ensuring improved production efficiency and system robustness.

Designed for high-efficiency power switching in industrial applications. Compact 3-Pin TO-247 package delivers mechanical stability and electrical performance. Wide operating temperature range supports diverse environmental conditions.

Low on-resistance reduces conduction losses significantly. Fast intrinsic diode improves switching efficiency in power circuits. Robust gate voltage ratings enable secure control signal application. Suits a broad range of power management and motor control circuits.

Through-hole mounting allows reliable PCB installation. Explore EnvMart's comprehensive range of semiconductor devices and power components to find compatible and complementary products for your industrial electronics projects.