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IXYS 1200 V 11 A Diode Switching 2-Pin TO-220AC DSEI12-12A
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.15mm |
| Length | 10.66mm |
| Model | DSEI12-12A |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | DSEI12-12A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AC |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 11A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 250μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 2.6V |
| Peak Reverse Recovery Time trr | 70ns |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
Key Features
- The diode features a through-hole mount type for secure PCB assembly.
- It has a single diode configuration optimized for switching operations.
- Consistent maximum forward voltage of 2.6 V ensures efficiency.
- Supports a wide operating temperature range from -40°C to 150°C.
- Exhibits a fast peak reverse recovery time of 70 ns enhancing switching speed.
- Reliable peak non-repetitive forward surge current rating of 80 A for transient conditions.
- Designed without automotive standard approval but suitable for various industrial electronic applications.
Product Description
IXYS DSEI12-12A is a high-performance diode designed for switching applications requiring reliable power management. This diode supports a peak reverse repetitive voltage of 1200 V and continuous forward current of 11 A, making it ideal for industrial, laboratory, and commercial electronic circuits.
The diode utilizes a through-hole mount and comes in a TO-220AC package, boasting compact dimensions (10.66 mm length, 4.82 mm width, and 9.15 mm height) to fit efficiently into various PCB layouts. It features a single configuration optimized for switching, with a maximum forward voltage drop of 2.6 V and a peak reverse current of only 250 μA, ensuring minimal leakage.
With a broad operating temperature range from -40°C to 150°C and a fast reverse recovery time of 70 ns, the DSEI12-12A is suited for high-speed switching environments. The device also supports peak non-repetitive forward surge currents up to 80 A, providing robustness against transient overloads.
This diode is primarily used in power supplies, automotive electronics, industrial automation, and semiconductor-based switching circuits where high voltage and current handling are critical.
The diode features a through-hole mount for easy integration. Switching type with single diode configuration for efficient rectification. High maximum continuous forward current capability of 11 A. Excellent peak reverse voltage withstand rating of 1200 V.
Compact TO-220AC package suitable for heat dissipation. Low forward voltage drop enhances power efficiency. Wide operating temperature range from -40 to 150°C ensures reliability. Fast peak reverse recovery time of 70 nanoseconds supports high-frequency switching applications.
Explore the Electronics & Electricals category for more IXYS semiconductor components and related power rectifiers on EnvMart.
Explore more products in our Semiconductors category.
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Frequently Asked Questions
The DSEI12-12A diode has a peak reverse repetitive voltage rating of 1200 V.
This diode can handle a maximum continuous forward current of 11 A.
The diode comes in a TO-220AC package type, which is suitable for through-hole mounting.
The maximum forward voltage drop for the DSEI12-12A is 2.6 V.
This model operates within a temperature range of -40°C to 150°C.
The DSEI12-12A features a fast peak reverse recovery time of 70 ns.
The diode supports a peak non-repetitive forward surge current rating of 80 A.
This diode has a pin count of 2.
It features a single diode configuration optimized for switching applications.
The peak reverse current for the DSEI12-12A is 250 μA.
This diode is commonly used in power supplies, automotive electronics, industrial automation, and semiconductor-based switching circuits.
The dimensions of this model are 10.66 mm in length, 4.82 mm in width, and 9.15 mm in height.
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