Vishay N-Channel Enhancement Mode MOSFET, 40 V, 75 A, SO-8 Package SQJ146EP-T1_GE3

Vishay SQJ146EP-T1_GE3 is a high-performance N-Channel Enhancement Mode MOSFET designed for industrial, automotive, and power management applications requiring efficient switching and low conduction losses. The device supports a maximum continuous drain current of 75 A and a drain-source voltage of 40 V, making it ideal for high power density circuits.

Packaged in a compact SO-8 surface-mount form, the SQJ146EP-T1_GE3 integrates TrenchFET Gen IV technology to optimize switching characteristics with a gate charge of 18 nC and a low typical drain-source resistance of 5.5 mΩ, reducing power dissipation during operation to a maximum of 75 W.

Designed for robustness, this MOSFET operates over a wide temperature range from -55°C up to 175°C, meeting the stringent requirements of automotive applications with AEC-Q101 qualification. The device withstands a maximum gate-source voltage of ±20 V and features a forward voltage drop of 1.1 V, ensuring stable performance and efficiency.

The 4-pin SO-8 package allows easy integration into compact PCB layouts in power conversion, motor control, and power supply circuits. It has undergone comprehensive testing including 100% Rg and UIS evaluations to ensure reliability. This MOSFET's features make it suitable for industrial automation systems, automotive electronics, power management modules, and consumer electronics requiring high current and voltage control.

This MOSFET features a low maximum drain-source resistance of 5.5 milliohms to minimize conduction losses. It is built in a compact SO-8 package suitable for surface mounting on PCBs. High maximum power dissipation of 75 watts supports demanding industrial and automotive power circuits.

Operating temperature range spans from -55°C to 175°C ensuring performance in harsh environments. Typical gate charge of 18 nC at Vgs optimizes switching efficiency. Compliance with AEC-Q101 automotive standard demonstrates suitability for high-reliability systems.

Maximum gate-source voltage rating is ±20 V for robust gate control tolerance. TrenchFET Gen IV technology provides superior electrical performance in a small form factor. Pin count of 4 allows standard operational configurations for MOSFETs.

Forward voltage drop is low at 1.1 V for efficient conduction in circuits. Explore Vishay MOSFETs within the EnvMart catalog for diverse power management and industrial electronic component solutions.

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