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DiodesZetex NPN Transistor 1 A DC Collector Current 45 V Collector Emitter Voltage 4-Pin SOT-223 BCP5410TA
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | BCP5410TA |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | BCP5410 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 45V |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
Key Features
- This transistor features an NPN polarity with a single transistor configuration.
- It supports a maximum power dissipation of 2 W for efficient operation.
- The device operates reliably within a temperature range from -55°C to 150°C.
- It is designed for surface mounting with a compact package size of 6.55 mm length and 7.1 mm width.
- The transistor has a minimum DC current gain (hFE) of 25 and a maximum transition frequency of 150 MHz.
- It has a 4-pin count and includes automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 compliance.
- Manufactured in China, it is suitable for various electronic and power semiconductor applications.
Product Description
DiodesZetex BCP5410TA is a high-performance NPN transistor designed for reliable switching and amplification in electronic circuits. Rated for a maximum DC collector current of 1 A and a maximum collector emitter voltage of 45 V, this device is housed in a 4-pin SOT-223 surface-mount package, ensuring compactness and ease of assembly.
Its transistor configuration is single, tailored to meet general-purpose semiconductor requirements. The device supports a maximum power dissipation of 2 W, facilitating efficient heat handling for stable operation across industrial, automotive, and consumer electronics environments.
The transistor's temperature tolerance ranges from -55°C to 150°C, making it suitable for demanding conditions. With a minimal DC current gain of 25 and a high transition frequency of 150 MHz, it ensures robust performance in high-frequency applications.
Physical dimensions include a length of 6.55 mm, width of 7.1 mm, and height of 1.65 mm, making it ideal for compact circuit designs. It is compliant with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, emphasizing its quality and durability in automotive electronics.
Manufactured in China, the BCP5410TA transistor delivers consistent performance and reliability. This transistor is suitable for use in power management, switching regulators, and general signal amplification in industrial and automotive electronic applications.
This transistor features an NPN polarity with a single transistor configuration. It supports a maximum power dissipation of 2 W for efficient operation. The device operates reliably within a temperature range from -55°C to 150°C.
It is designed for surface mounting with a compact package size of 6.55 mm length and 7.1 mm width. The transistor has a minimum DC current gain (hFE) of 25 and a maximum transition frequency of 150 MHz. It has a 4-pin count and includes automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 compliance.
Manufactured in China, it is suitable for various electronic and power semiconductor applications. Discover more high-quality semiconductor components in the DiodesZetex series on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum DC collector current for the BCP5410TA transistor is 1 A.
It supports a maximum collector-emitter voltage of 45 V.
The transistor has a length of 6.55 mm, a width of 7.1 mm, and a height of 1.65 mm.
The maximum power dissipation for this model is 2 W.
It operates reliably within a temperature range from -55°C to 150°C.
The minimum DC current gain (hFE) is 25.
The maximum transition frequency is 150 MHz.
It comes in a 4-pin SOT-223 surface-mount package.
It complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.
This transistor features an NPN polarity.
The maximum emitter-base voltage (VEBO) is 5 V.
This transistor is suitable for power management, switching regulators, and general signal amplification in electronic applications.
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