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Vishay Type N-Channel MOSFET 410 A 30 V Depletion 4-Pin PowerPAK SO-8L SQJ140ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ140ELP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00287Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 410 amperes for robust performance.
- Maximum drain-source voltage of 30 volts suitable for automotive and industrial environments.
- Depletion channel mode with a low drain-source resistance of 0.00287 ohms for efficiency.
- Surface mount PowerPAK SO-8L package with 4 pins for compact PCB layouts.
- Maximum power dissipation of 255 watts for high power density applications.
- Typical gate charge of 43 nC at gate-source voltage ensuring fast switching.
- Operating temperature range from -55°C to 125°C for wide environmental tolerance.
- AEC-Q101 automotive standard qualified for reliability in automotive systems.
Product Description
Vishay SQJ140ELP-T1_GE3 is a high-performance Type N-Channel MOSFET designed for demanding automotive and industrial applications requiring high current handling and power density. This MOSFET operates with a maximum continuous drain current of 410 A and withstands up to 30 V drain-source voltage in a depletion channel mode configuration. The device features an ultra-low on-resistance of 0.00287 ohms, optimizing efficiency and minimizing power loss in circuits.
The SQJ140ELP-T1_GE3 is housed in a compact 4-pin PowerPAK SO-8L surface mount package, allowing for space-saving PCB layouts and efficient thermal management. It has a maximum power dissipation capacity of 255 W, supporting high power operation typical in automotive electronics and motor control applications. The device delivers rapid switching capabilities with a typical gate charge of 43 nC at a specified gate-source voltage.
Engineered for harsh environments, the product supports a wide operating temperature range from -55°C to 125°C, making it suitable for automotive-grade equipment and industrial machinery. The device conforms with the AEC-Q101 automotive qualification standard, assuring quality and robustness required in automotive systems.
Additional electrical characteristics include a maximum gate-source voltage of 20 V and a forward voltage drop of 1.1 V, enabling reliable and precise control in power circuits. Its compact size with a length of 6.15 mm and width of 4.9 mm facilitates integration in dense electronic assemblies.
Maximum continuous drain current: 410 A. Drain-source voltage rating: 30 V. Depletion type N-channel MOSFET operation. Low drain-source resistance: 0.00287 Ω. PowerPAK SO-8L 4-pin surface mount package. Maximum power dissipation: 255 W.
Typical gate charge: 43 nC @ Vgs. Operating temperature: -55°C to 125°C. AEC-Q101 automotive standard qualified. Dimensions: Length 6.15 mm, Width 4.9 mm.
This MOSFET is ideal for use in automotive electronics, industrial power control, and high power density circuits where reliability and performance are critical. For engineers requiring automotive-qualified discrete semiconductors, the SQJ140ELP-T1_GE3 from Vishay delivers exceptional electrical and thermal capabilities.
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Frequently Asked Questions
The maximum continuous drain current of this model is 410 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 30 V, suitable for various applications including automotive environments.
It is housed in a PowerPAK SO-8L surface mount package, which is designed for compact PCB layouts.
The typical gate charge at gate-source voltage for this model is 43 nC, enabling fast switching capabilities.
It features a low drain-source resistance of 0.00287 ohms, optimizing efficiency and minimizing power loss.
This MOSFET is AEC-Q101 qualified, ensuring reliability in automotive applications.
The maximum power dissipation capacity of this model is 255 W, supporting high power density applications.
The dimensions of this MOSFET are 6.15 mm in length and 4.9 mm in width, facilitating integration into compact designs.
The forward voltage drop for this model is 1.1 V, which is important for reliable control in power circuits.
This model has 4 pins, suitable for surface mount applications.
It utilizes a Type N-channel configuration, operating in depletion mode.
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