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STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V, 0.036Ω RDS(on), Depletion Mode, TO-247 Package STW70N65DM6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 41.2mm |
| Length | 15.9mm |
| Model | STW70N65DM6 |
| Mount Type | Through Hole |
| Series | ST |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 68A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.036Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 450W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Forward Voltage Vf | 1.6V |
Key Features
- Rated for maximum continuous drain current of 68 amperes.
- Maximum drain-source voltage of 650 volts suitable for high power circuits.
- Low maximum drain-source resistance of 0.036 ohms ensures efficient conduction.
- Depletion mode channel type for specialized switching requirements.
- Equipped with typical gate charge of 125 nanocoulombs for fast switching.
- High power dissipation capacity of 450 watts suitable for demanding environments.
- Operates reliably within a temperature range from -55°C to 150°C.
- Durable TO-247 package with through-hole mount and 3 pins for easy PCB integration.
Product Description
STMicroelectronics STW70N65DM6 is a ST Type N-Channel Power MOSFET optimized for high power and high voltage applications. It features a maximum continuous drain current of 68A and a drain-source voltage rating of 650V, making it suitable for industrial, power supply, and motor control applications.
This MOSFET utilizes depletion mode operation with an extremely low RDS(on) of 0.036Ω, which enhances energy efficiency by reducing conduction losses. Its typical gate charge of 125nC contributes to fast and efficient switching performance.
Housed in a durable TO-247 package that facilitates through-hole mounting, this component provides mechanical robustness and easy assembly on printed circuit boards. The device is tested for avalanche energy and includes built-in Zener protection, ensuring high reliability.
Operating temperature range spans from -55°C to 150°C, allowing use in harsh industrial and commercial electronics environments. It supports power dissipation up to 450W, catering to demanding heat and power dissipation requirements.
This MOSFET is ideal for use in electronic power controls, industrial automation, motor drives, and switching power supplies, among other applications. Maximum continuous drain current of 68 amperes. Drain-source voltage rating of 650 volts.
Low on-resistance (0.036Ω) improves energy efficiency. Depletion mode with fast switching gate charge. High power dissipation capacity of 450 watts. Robust TO-247 through-hole package with 3 pins. Wide operating temperature range from -55°C to 150°C.
Explore a wide range of semiconductor components and Power MOSFET devices at EnvMart for all your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 68 amperes.
This model has a drain-source voltage rating of 650 volts.
The maximum drain-source resistance (RDS(on)) is 0.036 ohms, which enhances energy efficiency.
The typical gate charge is 125 nanocoulombs, contributing to fast switching performance.
It supports a maximum power dissipation of up to 450 watts, suitable for demanding applications.
This unit operates reliably within a temperature range from -55°C to 150°C.
It is housed in a TO-247 package, which is designed for through-hole mounting.
This model features 3 pins for easy integration into printed circuit boards.
It is a Type N-channel MOSFET, utilizing depletion mode operation.
This MOSFET is suitable for industrial automation, motor drives, and switching power supplies, among other applications.
Yes, it includes built-in Zener protection and is tested for avalanche energy to ensure high reliability.
The height of the package is 41.2 mm and the length is 15.9 mm.
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