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onsemi Type P-Channel MOSFET, 760 mA Max Drain Current, 20 V Drain-Source Voltage, 310 mW Power Dissipation NTE4151PT1G

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onsemi Type P-Channel MOSFET, 760 mA Max Drain Current, 20 V Drain-Source Voltage, 310 mW Power Dissipation NTE4151PT1G

Name: onsemi Type P-Channel MOSFET, 760 mA Max Drain Current, 20 V Drain-Source Voltage, 310 mW Power Dissipation NTE4151PT1G
Brand: onsemi
SKU: 105765
Price: 0.14 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.8mm
Length	1.7mm
Model	NTE4151PT1G
Width	0.95mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SC-89
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	760mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	310mW
Typical Gate Charge Qg @ Vgs	2.1nC
Maximum Gate Source Voltage Vgs	6V
Forward Voltage Vf	-1.1V

Key Features

Supports enhancement mode channel operation for efficient switching performance.
Maximum power dissipation rating of 310 mW ensuring reliable thermal management.
Compact dimensions with length 1.7 mm, width 0.95 mm, and height 0.8 mm suitable for dense PCB designs.
Wide operating temperature range from -55°C to 150°C for harsh environment applications.
Low typical gate charge of 2.1 nC at Vgs enhances switching speed.
Maximum gate-source voltage of ±6 V for robust gate drive control.
Forward voltage of -1.1 V indicating low conduction losses.
Surface mount technology for automated assembly compatibility.

Product Description

onsemi NTE4151PT1G is a Type P-Channel enhancement mode MOSFET designed for surface mount applications requiring reliable switching and amplification with modest power levels. It supports a maximum continuous drain current of 760 mA and withstands drain-source voltages up to 20 V. Featuring a low typical gate charge of 2.1 nC and a maximum gate-source voltage of 6 V, it offers efficient gate driving and switching performance.

This MOSFET package type SC-89 with three pins measures 1.7 mm in length, 0.95 mm in width, and 0.8 mm in height, making it suitable for compact PCB layouts in industrial, automotive, and consumer electronics sectors. It operates reliably in temperatures ranging from -55°C to 150°C, allowing usage in demanding thermal environments.

The device’s maximum power dissipation is rated at 310 mW, ensuring effective thermal management during operation. The forward voltage drop of -1.1 V reduces conduction losses and improves efficiency. Designed for surface mount technology (SMT), it integrates seamlessly into automated manufacturing lines, enhancing production efficiency.

Typical applications for this MOSFET include switching circuits, load drivers, analog and digital amplifiers, power management circuits, and automotive electronic controls. Its P-channel configuration provides high-side switching capabilities in various electronic systems.

Supports enhancement mode channel operation for efficient switching performance. Maximum power dissipation rating of 310 mW ensuring reliable thermal management. Compact dimensions suitable for dense PCB designs. Wide operating temperature range from -55°C to 150°C.

Low typical gate charge for fast switching speed. Maximum gate-source voltage of ±6 V for gate control. Forward voltage indicating low conduction losses. Surface mount package enables automated assembly. Three-pin configuration for standard connectivity.

Explore onsemi Power MOSFETs and other semiconductor solutions at EnvMart for industrial and commercial electronics applications.