onsemi Isolated 2 Type P-Channel Power MOSFET 4.1A 20V Enhancement 8-Pin ChipFET NTHD4102PT1G

onsemi NTHD4102PT1G Isolated 2 Type P-Channel Power MOSFET is a high-performance discrete semiconductor device optimized for power management and switching applications. It features a dual P-Channel configuration in a surface-mountable 8-pin ChipFET package. This MOSFET supports a maximum continuous drain current of 4.1 amperes and can handle a drain-source voltage up to 20 volts, making it suitable for low voltage power control tasks.

Its enhancement mode channel operation and isolated transistor configuration facilitate efficient switching with minimal losses. The device’s typical gate charge of 7.6nC at Vgs allows for fast switching speeds, improving overall circuit response. The maximum drain-source resistance of 170 milliohms ensures low conduction losses, enhancing power efficiency.

Designed to operate safely within a temperature range of -55°C to 150°C, the component is reliable in both demanding industrial environments and commercial electronics applications. The low forward voltage of -0.8V further contributes to overall energy efficiency.

Dimensions of the MOSFET are compact with a height of 1.1mm, length of 3.1mm, and width of 1.7mm, enabling use in space-constrained designs. Typical uses include industrial power switching, power management in electronic circuits, and integration into power supply units, automotive electronics (non-automotive certified), laboratory equipment, and HVAC control systems.

The product is RoHS compliant and supplied new, ensuring quality and regulatory compliance. Designed for surface mounting with ChipFET package type. Maximum continuous drain current of 4.1 amperes. Maximum drain-source voltage rating of 20 volts.

Includes dual P-Channel MOSFET elements per chip with enhancement type channel mode. Maximum power dissipation of 2.1 watts. Operates reliably from -55°C minimum to 150°C maximum temperature. Low typical gate charge of 7.6 nanocoulombs at Vgs.

Maximum drain-source resistance of 170 milliohms to ensure efficient conduction. Isolated transistor configuration simplifies circuit design. Explore the comprehensive range of Power MOSFETs and other discrete semiconductors at EnvMart for industrial, commercial, and laboratory applications.