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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.9mm |
| Length | 2.2mm |
| Model | NTS4409NT1G |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | NTS4409N |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Typical Gate Charge Qg @ Vgs | 1.2nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 0.82V |
onsemi NTS4409NT1G is a high-quality N-Channel Power MOSFET designed for efficient switching in electronic applications. It supports a maximum continuous drain current of 700 mA and a maximum drain-source voltage of 25 V, packed in a compact 3-pin SOT-23 surface-mount package which is widely used in industrial electronics, automotive systems, and consumer devices.
This enhancement mode MOSFET features a low gate charge of 1.2 nC at standard gate-source voltage, ensuring fast switching speeds and energy efficiency. The device comes with a maximum drain-source resistance (Rds) of 400 mΩ, helping reduce conduction losses in power stages. Operating within a temperature range of -55°C to 150°C, it is suitable for harsh environments and industrial temperature ranges.
The MOSFET also provides a forward voltage of 0.82 V and maximum power dissipation capability of 330 mW, making it ideal for low power amplification, switching, and driver stage applications. Its compliance with the AEC-Q101 automotive standard certifies high reliability for automotive and other demanding uses.
Its compact physical dimensions (2.2 mm length, 1.35 mm width, and 0.9 mm height) allow easy integration into dense circuit boards, enhancing design flexibility. Compact SOT-23 package with three pins enabling surface mounting.
Maximum continuous drain current of 700 mA suitable for low power applications. Drain-source voltage rating of 25 V ensuring reliable switching performance. Enhancement mode operation with low gate charge of 1.2 nC for efficient switching.
Maximum drain-source resistance (Rds) of 400 mΩ minimizes conduction losses. Operating temperature range from -55°C up to 150°C for robust thermal performance. Forward voltage of 0.82 V optimizes power efficiency. Compliant with AEC-Q101 automotive standard for high reliability.
Dimensions: length 2.2 mm, width 1.35 mm, height 0.9 mm for compact PCB footprints. Maximum power dissipation of 330 mW suitable for small-signal electronic circuits.
This onsemi MOSFET is engineered for applications in industrial automation, power management circuits, automotive electronic control units, consumer electronic devices, and embedded systems requiring reliable power switching and amplification. EnvMart provides this product for professionals designing or repairing electronic circuits demanding high performance and durability.
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