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onsemi N-Channel Power MOSFET 700 mA 25 V Enhancement 3-Pin SOT-23 NTS4409NT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.2mm
Model NTS4409NT1G
Width 1.35mm
Mount Type Surface
Series NTS4409N
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 330mW
Typical Gate Charge Qg @ Vgs 1.2nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf 0.82V

Key Features

  • Compact SOT-23 package with three pins enabling surface mounting.
  • Maximum continuous drain current of 700 mA suitable for low power applications.
  • Drain-source voltage rating of 25 V ensuring reliable switching performance.
  • Enhancement mode operation with low gate charge of 1.2 nC for efficient switching.
  • Maximum drain-source resistance (Rds) of 400 mΩ minimizes conduction losses.
  • Operating temperature range from -55°C up to 150°C for robust thermal performance.
  • Forward voltage of 0.82 V optimizes power efficiency.
  • Compliant with AEC-Q101 automotive standard for high reliability.

Product Description

onsemi NTS4409NT1G is a high-quality N-Channel Power MOSFET designed for efficient switching in electronic applications. It supports a maximum continuous drain current of 700 mA and a maximum drain-source voltage of 25 V, packed in a compact 3-pin SOT-23 surface-mount package which is widely used in industrial electronics, automotive systems, and consumer devices.

This enhancement mode MOSFET features a low gate charge of 1.2 nC at standard gate-source voltage, ensuring fast switching speeds and energy efficiency. The device comes with a maximum drain-source resistance (Rds) of 400 mΩ, helping reduce conduction losses in power stages. Operating within a temperature range of -55°C to 150°C, it is suitable for harsh environments and industrial temperature ranges.

The MOSFET also provides a forward voltage of 0.82 V and maximum power dissipation capability of 330 mW, making it ideal for low power amplification, switching, and driver stage applications. Its compliance with the AEC-Q101 automotive standard certifies high reliability for automotive and other demanding uses.

Its compact physical dimensions (2.2 mm length, 1.35 mm width, and 0.9 mm height) allow easy integration into dense circuit boards, enhancing design flexibility. Compact SOT-23 package with three pins enabling surface mounting.

Maximum continuous drain current of 700 mA suitable for low power applications. Drain-source voltage rating of 25 V ensuring reliable switching performance. Enhancement mode operation with low gate charge of 1.2 nC for efficient switching.

Maximum drain-source resistance (Rds) of 400 mΩ minimizes conduction losses. Operating temperature range from -55°C up to 150°C for robust thermal performance. Forward voltage of 0.82 V optimizes power efficiency. Compliant with AEC-Q101 automotive standard for high reliability.

Dimensions: length 2.2 mm, width 1.35 mm, height 0.9 mm for compact PCB footprints. Maximum power dissipation of 330 mW suitable for small-signal electronic circuits.

This onsemi MOSFET is engineered for applications in industrial automation, power management circuits, automotive electronic control units, consumer electronic devices, and embedded systems requiring reliable power switching and amplification. EnvMart provides this product for professionals designing or repairing electronic circuits demanding high performance and durability.

onsemi N-Channel Power MOSFET 700 mA 25 V Enhancement 3-Pin SOT-23 NTS4409NT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 700 mA, making it suitable for low power applications.

The drain-source voltage rating is 25 V, ensuring reliable switching performance in various applications.

It features a low gate charge of 1.2 nC at standard gate-source voltage, which contributes to efficient switching.

The maximum drain-source resistance (Rds) is 400 mΩ, which helps minimize conduction losses during operation.

This MOSFET operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 0.9 mm in height, allowing for compact PCB integration.

It comes in a compact SOT-23 package, which is designed for surface mounting.

Yes, it is compliant with the AEC-Q101 automotive standard, certifying its reliability for automotive applications.

The maximum power dissipation capability is 330 mW, suitable for small-signal electronic circuits.

The forward voltage is 0.82 V, which optimizes power efficiency in applications.

This model has 3 pins, facilitating its integration into various circuit designs.

It utilizes an N-channel type, which is typical for enhancement mode MOSFETs.

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