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IXYS HiperFET Polar N-Channel MOSFET 25 A 800 V Enhancement 3-Pin ISOPLUS247 IXFR44N80P

Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 21.34mm
Length 16.13mm
Model IXFR44N80P
Width 5.21mm
Mount Type Through Hole
Series HiperFET, Polar
Maximum Operating Temperature 150°C
Package Type ISOPLUS247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 25A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 200nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.5V

Key Features

  • Designed with HiperFET Polar technology for efficient switching performance.
  • Enhancement mode channel type ensures reliable operation.
  • Maximum power dissipation rating of 300 W supports high power applications.
  • Wide operating temperature range from -55°C to 150°C for industrial use.
  • Low maximum drain-source resistance of 200 mΩ minimizes power loss.
  • Typical gate charge of 200 nC at specified gate voltage allows fast switching.
  • Maximum gate-source voltage tolerance of ±30 V enhances control robustness.
  • Compact dimensions of 21.34 mm height, 16.13 mm length, and 5.21 mm width.

Product Description

The IXYS IXFR44N80P is a high-quality N-channel Power MOSFET transistor from the IXYS HiperFET Polar series, featuring a robust maximum continuous drain current of 25 A and a drain-source voltage rating of 800 V. Packaged in a 3-pin ISOPLUS247 form factor designed for through-hole mounting, this device offers enhanced electrical performance and thermal handling suitable for demanding industrial environments.

Engineered with enhancement mode channel technology, this MOSFET delivers fast switching capabilities supported by a typical gate charge of 200 nC at the gate voltage rating, and a maximum gate-source voltage limit of -30 V to +30 V. The maximum drain-source on resistance is a low 200 mΩ, enabling efficient conduction and minimized power dissipation of up to 300 W. It operates reliably over a wide temperature range from -55°C up to 150°C, making it ideal for harsh conditions.

The device's compact mechanical dimensions - 21.34 mm in height, 16.13 mm in length, and 5.21 mm in width - allow flexible design integration in power electronics, motor drives, and other semiconductor switching applications. The device includes a fast intrinsic diode as part of IXYS' HiperFET line, further improving switching efficiencies and device protection.

High-performance N-channel MOSFET with 25 A maximum continuous current rating. 800 V drain-source voltage capability for high-voltage switching. Low on-resistance reduces power losses and heatsinking demands. Wide operating temperature from -55°C to 150°C supports industrial applications.

Through-hole ISOPLUS247 package enhances mechanical durability and ease of soldering. Robust gate voltage limits protect gate oxide under switching conditions. Fast switching via optimized gate charge enabling higher frequency operation.

Compact size suitable for dense PCB layouts requiring efficient power management.

This IXYS HiperFET MOSFET is essential for industrial, automotive, power management, motor control, and HVAC applications where reliability and efficiency are paramount. It is designed to improve production efficiency and device longevity within electronic assemblies.

Explore EnvMart’s comprehensive catalog for more semiconductor devices by IXYS and other trusted manufacturers to find the ideal components for your industrial and electronic projects.

IXYS HiperFET Polar N-Channel MOSFET 25 A 800 V Enhancement 3-Pin ISOPLUS247 IXFR44N80P
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