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| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.34mm |
| Length | 16.13mm |
| Model | IXFR44N80P |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | ISOPLUS247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
The IXYS IXFR44N80P is a high-quality N-channel Power MOSFET transistor from the IXYS HiperFET Polar series, featuring a robust maximum continuous drain current of 25 A and a drain-source voltage rating of 800 V. Packaged in a 3-pin ISOPLUS247 form factor designed for through-hole mounting, this device offers enhanced electrical performance and thermal handling suitable for demanding industrial environments.
Engineered with enhancement mode channel technology, this MOSFET delivers fast switching capabilities supported by a typical gate charge of 200 nC at the gate voltage rating, and a maximum gate-source voltage limit of -30 V to +30 V. The maximum drain-source on resistance is a low 200 mΩ, enabling efficient conduction and minimized power dissipation of up to 300 W. It operates reliably over a wide temperature range from -55°C up to 150°C, making it ideal for harsh conditions.
The device's compact mechanical dimensions - 21.34 mm in height, 16.13 mm in length, and 5.21 mm in width - allow flexible design integration in power electronics, motor drives, and other semiconductor switching applications. The device includes a fast intrinsic diode as part of IXYS' HiperFET line, further improving switching efficiencies and device protection.
High-performance N-channel MOSFET with 25 A maximum continuous current rating. 800 V drain-source voltage capability for high-voltage switching. Low on-resistance reduces power losses and heatsinking demands. Wide operating temperature from -55°C to 150°C supports industrial applications.
Through-hole ISOPLUS247 package enhances mechanical durability and ease of soldering. Robust gate voltage limits protect gate oxide under switching conditions. Fast switching via optimized gate charge enabling higher frequency operation.
Compact size suitable for dense PCB layouts requiring efficient power management.
This IXYS HiperFET MOSFET is essential for industrial, automotive, power management, motor control, and HVAC applications where reliability and efficiency are paramount. It is designed to improve production efficiency and device longevity within electronic assemblies.
Explore EnvMart’s comprehensive catalog for more semiconductor devices by IXYS and other trusted manufacturers to find the ideal components for your industrial and electronic projects.
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