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onsemi P-Channel MOSFET 400 mA 20 V Enhancement 3-Pin SOT-23 NTR0202PLT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR0202PLT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NTR0202PL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225mW |
| Typical Gate Charge Qg @ Vgs | 2.18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1V |
Key Features
- Features a compact 3-pin SOT-23 surface mount package suitable for space-constrained applications.
- Enhancement mode device with low maximum drain-source resistance of 550 milliohms.
- Supports a maximum power dissipation of 225 mW ensuring reliable thermal handling.
- Operational temperature range from -55°C to 150°C allows use in harsh environments.
- Typical gate charge of 2.18 nC enables fast switching and low gate driving power.
- Maximum gate-source voltage rating of 20 V to safeguard against over-voltage conditions.
- Designed for use in electronic circuits requiring low current, low voltage power switching.
Product Description
onsemi NTR0202PLT1G is a P-Channel Enhancement Mode MOSFET delivering reliable switching and amplification capabilities with a continuous drain current rating of 400 mA and a maximum drain-source voltage of 20 V. Packaged in a compact 3-pin SOT-23 surface mount, this device is ideal for modern compact electronic designs requiring efficient power control.
The MOSFET features a low maximum drain-source resistance of 550 milliohms, limiting conduction losses and improving efficiency in power-sensitive circuits. Its maximum power dissipation of 225 mW ensures robust thermal performance within specified operating conditions.
Engineered for high reliability, the device operates from a minimum temperature of -55°C up to a maximum temperature of 150°C, making it suitable for industrial, automotive (non-automotive standard compliant), and consumer electronics applications.
The typical gate charge of 2.18 nanocoulombs facilitates efficient switching speeds, reducing power loss during state transitions. The maximum gate-source voltage is rated at 20 V, providing protection against excessive gate voltages.
Physical dimensions measuring 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height enable the MOSFET to be integrated into tightly packed PCBs while maintaining excellent electrical performance.
Compact SOT-23 surface mount package for space-saving designs. High switching efficiency due to low Rds(on) and gate charge. Suitable for power management in electronic components and industrial equipment. Wide temperature range supports demanding environmental conditions.
Low forward voltage drop enhances power efficiency.
This onsemi MOSFET is suitable for electronic component assemblies used in industrial, manufacturing, and consumer product applications where low voltage and current power switching is necessary. Its compact form factor and performance specifications make it a preferred choice for designers focusing on miniaturization and power optimization.
Explore more high-quality semiconductor devices by browsing EnvMart's Electronics & Electricals Semiconductor Power MOSFET category for comprehensive product selections.
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Frequently Asked Questions
The maximum continuous drain current for this model is 400 mA.
This MOSFET has a maximum drain-source voltage rating of 20 V.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 225 mW.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
The maximum gate-source voltage rating is 20 V.
The typical gate charge is 2.18 nC.
It comes in a compact 3-pin SOT-23 surface mount package.
The maximum drain-source resistance is 550 milliohms.
This device features a P-Channel type.
It is suitable for electronic circuits requiring low current, low voltage power switching.
The country of origin for this MOSFET is India.
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