IXYS HiperFET Polar N-Channel MOSFET, 50A, 200V, Enhancement Mode, TO-220, 3-Pin IXTP50N20P

The IXYS IXTP50N20P is a high-performance N-channel MOSFET from the HiperFET Polar series, engineered for demanding industrial, power electronics, and automation applications. With a maximum continuous drain current of 50A and a maximum drain-source voltage of 200V, this enhancement mode MOSFET is tailored for systems requiring reliable high-current switching and voltage stability.

Utilizing the TO-220 package featuring three pins and through-hole mounting, the IXTP50N20P delivers ease of installation and excellent thermal dissipation, which is paramount for robust PCB designs and power modules. The device’s low drain-source resistance of just 60 milliohms reduces conduction losses, contributing to greater system efficiency and lower heat generation during high-power operation.

Key electrical characteristics include a fast typical gate charge of 70nC, a maximum gate-source voltage rating of 20V, and a 1.5V forward voltage, enabling rapid switching and robust input protection, vital for motor controls, converters, and renewable energy circuits. The maximum power dissipation capability of 360W makes it an ideal solution for systems encountering substantial load demands.

Designed to operate in extreme ambient conditions, the IXTP50N20P offers a broad operating temperature window from -55°C to 175°C, making it suitable for industrial, laboratory, and commercial power environments. Its compact footprint - measuring 10.66 mm in length, 4.83 mm in width, and 9.15 mm in height - enables integration in space-constrained equipment, including high-density electronic panels and modular power supplies.

Applications span across power control, industrial automation, renewable energy installations, motor drives, battery management systems, laboratory instrumentation, and other fields requiring efficient high-current switching and rugged reliability.

50A maximum drain current, enabling high-power operation in demanding loads. 200V drain-source voltage rating for advanced power management. Enhancement-mode device for rapid switching and fine control. Low Rds(on) minimizes energy loss and improves device lifespan.

TO-220 package supports standard through-hole PCB layouts and robust cooling. Wide operating temperature range suitable for industrial and laboratory environments. Supports up to 360W power dissipation for high-performance power module designs.

Compact dimensions facilitate space-saving electrical panel designs. Explore more IXYS MOSFETs and related semiconductors at EnvMart for advanced industrial and electronics solutions.