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STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 18 A, 650 V Enhancement, TO-247 Package STW24N60M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW24N60M2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Handles a maximum continuous drain current of 18 A.
- Supports a maximum drain-source voltage of 650 V.
- Equipped with a 3-pin TO-247 through-hole package.
- Features low gate charge of 29 nC enabling efficient switching.
- Operates reliably between -55°C and 150°C temperature range.
- Has a maximum power dissipation of 150 W for robust applications.
- Utilizes MDmesh M2 technology for superior performance.
- Maximum drain-source resistance is 190 mΩ ensuring low conduction losses.
Product Description
STMicroelectronics STW24N60M2 is a high-voltage N-Channel MOSFET from the MDmesh™ M2 series tailored for power electronic applications requiring high efficiency and reliability.
This enhancement mode transistor supports a continuous drain current of 18 A and can withstand drain-source voltages up to 650 V, making it suitable for demanding switching environments including resonant-type switching supplies such as LLC converters.
The device comes in a robust 3-pin TO-247 through-hole package that facilitates ease of mounting and excellent thermal dissipation, with a maximum dissipation rating of 150 W. Its low gate charge of 29 nC reduces switching losses, and a maximum drain-source resistance of 190 milliohms ensures efficient conduction.
Engineered to operate over a broad temperature range from -55°C to 150°C, it offers high reliability in industrial, commercial, and automotive electronics, although it does not comply with automotive-specific standards.
Handles a maximum continuous drain current of 18 A. Supports a maximum drain-source voltage of 650 V. Equipped with a 3-pin TO-247 through-hole package. Features low gate charge of 29 nC enabling efficient switching. Operates reliably between -55°C and 150°C temperature range.
Has a maximum power dissipation of 150 W for robust applications. Utilizes MDmesh M2 technology for superior performance. Maximum drain-source resistance is 190 mΩ ensuring low conduction losses. The product is made in China and designed for applications in power conversion, industrial controls, and power management systems.
Explore more products in the Semiconductor and Power MOSFET categories on EnvMart for complementary components and advanced solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
It supports a maximum drain-source voltage of 650 V.
This model comes in a 3-pin TO-247 through-hole package.
It operates reliably between -55°C and 150°C.
The maximum power dissipation for the STW24N60M2 is 150 W.
It features a low gate charge of 29 nC, enabling efficient switching.
The maximum drain-source resistance is 190 mΩ, ensuring low conduction losses.
It is suitable for power conversion, industrial controls, and power management systems.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
This model is a Type N-channel MOSFET.
The maximum gate-source voltage is 25 V.
It belongs to the MDmesh M2 series.
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