DiodesZetex Isolated 2 Type P and Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement Mode, 8-Pin SOIC ZXMC3A16DN8TA

DiodesZetex ZXMC3A16DN8TA is a high-performance isolated dual-channel power MOSFET designed with both P-type and N-type enhancement mode transistors. It delivers a maximum continuous drain current of 6.4 A and supports drain-source voltages up to 30 V. The device comes in a compact 8-pin SOIC surface-mount package with dimensions of 5 mm length, 4 mm width, and 1.5 mm height, making it suitable for space-constrained electronic circuit designs.

Its low drain-source resistance (50 mΩ maximum) ensures minimal conduction losses, contributing to improved efficiency in power switching applications. The typical gate charge of 17.5 nC allows for fast switching speeds with controlled gate drive currents.

Designed to operate in a wide temperature range from -55°C to 150°C, the MOSFET is reliable for industrial and consumer-grade electronic applications. The maximum power dissipation rating of 2.1 W enables operation under moderate power conditions while maintaining thermal stability.

The ZXMC3A16DN8TA device complies with multiple industry standards including RoHS, J-STD-020, UL 94V-0, AEC-Q101, and MIL-STD-202, ensuring environmental safety, quality, and robustness for demanding applications.

Dual N/P-Channel MOSFET architecture integrates two transistors per chip, optimizing board layout and simplifying circuit design. It is widely used in power management, switching regulators, motor drives, and load switching circuits within electronic equipment.

Its isolated transistor configuration further aids in reducing interference and enhancing circuit integrity in complex systems. This MOSFET offers a versatile solution for engineers requiring efficient power control in compact and reliable formats.

This device features an enhancement mode transistor configuration suitable for high-performance switching. Maximum continuous drain current is 6.4 amperes, with a 30 volt maximum drain-source voltage rating. The MOSFET has a low maximum drain-source resistance of 50 milliohms, enhancing efficiency.

Typical gate charge at Vgs is 17.5 nanocoulombs for optimized switching performance. Designed for surface mount applications with an 8-pin SOIC package measuring 5 mm length, 4 mm width, and 1.5 mm height. Wide operating temperature range from -55°C to 150°C ensures durability in various conditions.

Maximum power dissipation rating of 2.1 watts supports moderate power uses. Complies with RoHS, J-STD-020, UL 94V-0, AEC-Q101, and MIL-STD-202 standards for reliability and environmental safety. Dual-channel arrangement with two elements per chip reduces board space and enhances circuit design flexibility.

This product is manufactured in China and is offered in tape packaging to facilitate automated assembly and efficiency in production environments. Explore other Power MOSFETs and semiconductor components at EnvMart for additional high-quality electronic solutions.