IXYS HiperFET Polar N-Channel Power MOSFET 53A 800V Enhancement Mode 4-Pin SOT-227 IXFN60N80P

The IXYS IXFN60N80P is a high-performance, N-channel power MOSFET in the HiperFET Polar series renowned for its fast intrinsic diode and efficient switching capabilities. Designed for industrial and commercial electronics, it delivers a maximum continuous drain current of 53 amperes and a drain-source voltage rating of 800 volts, making it suitable for high power and high voltage switching applications.

This device features an enhancement mode channel with a low maximum drain-source resistance of 140 milliohms, which reduces conduction losses and enhances overall efficiency in power management circuits. Its package type is the panel-mount 4-pin SOT-227, offering mechanical robustness and easy integration in electronic assemblies.

The MOSFET supports a high maximum power dissipation of 1.04 kilowatts, allowing it to handle heavy electrical loads continuously without degradation. It operates reliably in harsh environmental conditions with a temperature range from -55°C to 150°C, ensuring durability and reliability in industrial environments.

Additional technical highlights include a typical gate charge of 250 nanocoulombs, which allows for responsive switching control, and a maximum gate-source voltage rating of -30 to +30 volts that protects the device from gate overvoltage. A forward voltage drop of 1.5 volts further contributes to efficient power conversion.

Physical dimensions of the component are precise at 38.23 mm length, 25.42 mm width, and 9.6 mm height, facilitating accurate design and placement in electronic modules. Enhancement mode N-channel MOSFET for fast switching.

53A maximum continuous drain current rating for demanding applications. 800V maximum drain-source voltage for high-voltage operation. Panel mount 4-pin SOT-227 package. 140mΩ maximum drain-source resistance to minimize losses.

1.04kW power dissipation supports sustained load handling. Operating temperature range from -55°C to 150°C for reliability. Typical gate charge of 250nC for efficient gate control. Gate-source voltage range of -30V to +30V prevents damage.

Forward voltage drop of 1.5V reduces conduction losses. Physical size: 38.23 mm length × 25.42 mm width × 9.6 mm height.

This IXYS Power MOSFET is ideal for industrial power electronics, motor control, power supplies, and renewable energy systems. Its robust specifications and reliable performance make it a preferred choice for applications requiring efficient high current and high voltage switching components.

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