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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP57N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 63mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STP57N65M5 is an N-channel MDmesh™ M5 Series MOSFET optimized for high-power electronic applications requiring efficient switching.
This transistor delivers a maximum continuous drain current of 42 A and a maximum drain-source voltage of 710 V, making it ideal for power supplies, solar power converters, and electronic lighting controls. The low on-state resistance (63 mΩ) and low gate charge (98 nC) ensure minimal power losses and improved energy efficiency, critical for high-frequency PWM and PFC topologies.
Encased in a durable 3-pin TO-220 package with through-hole mounting, the device supports reliable mechanical and thermal performance. It can dissipate up to 250 W of power and withstands a broad operating temperature range from -55°C to 150°C, suitable for demanding industrial and commercial environments.
Additional features include a maximum gate-source voltage of 25 V, forward voltage of 1.3 V, and compact form factor dimensions suited to tight PCB layouts. STMicroelectronics designs this MOSFET as an effective solution for hard switching in various electronic, renewable energy, and power conversion applications.
Maximum continuous drain current of 42 A enables high-power capabilities. High voltage rating of 710 V for robust operation in power circuits. Low maximum drain-source resistance helps reduce conduction losses. 3-pin TO-220 package offers reliable through-hole mounting and thermal performance.
Enhancement mode channel with 25 V maximum gate-source voltage for wide control range. Efficient switching enabled by typical gate charge of 98 nC. Power dissipation up to 250 W supports demanding application requirements.
Wide temperature operating range from -55°C to 150°C ensures durability. Compact size with dimensions 15.75mm height, 10.4mm length, and 4.6mm width.
This product is ideal for industrial, commercial, electronic manufacturing, renewable energy systems, and HVAC power management systems. Its technical excellence and robust design ensure high reliability and efficiency in power electronic circuits.
Explore more components in our Semiconductor Power MOSFET category for your advanced electronic design needs at EnvMart.
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