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STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-220 STP57N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP57N65M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 63mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 250W
Typical Gate Charge Qg @ Vgs 98nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.3V

Key Features

  • Supports a maximum continuous drain current of 42 A for high power needs.
  • Maximum drain-source voltage rating of 710 V ensures robustness in power circuits.
  • Features a low maximum drain-source resistance of 63 mΩ for minimal power loss.
  • Encapsulated in a reliable 3-pin TO-220 package, suitable for through-hole mounting.
  • Designed for enhancement mode channel operation with a maximum gate-source voltage of 25 V.
  • Typical gate charge of 98 nC contributes to efficient switching performance.
  • Capable of dissipating up to 250 W power, supporting demanding applications.
  • Operates reliably over a wide temperature range from -55°C to 150°C.

Product Description

STMicroelectronics STP57N65M5 is an N-channel MDmesh™ M5 Series MOSFET optimized for high-power electronic applications requiring efficient switching.

This transistor delivers a maximum continuous drain current of 42 A and a maximum drain-source voltage of 710 V, making it ideal for power supplies, solar power converters, and electronic lighting controls. The low on-state resistance (63 mΩ) and low gate charge (98 nC) ensure minimal power losses and improved energy efficiency, critical for high-frequency PWM and PFC topologies.

Encased in a durable 3-pin TO-220 package with through-hole mounting, the device supports reliable mechanical and thermal performance. It can dissipate up to 250 W of power and withstands a broad operating temperature range from -55°C to 150°C, suitable for demanding industrial and commercial environments.

Additional features include a maximum gate-source voltage of 25 V, forward voltage of 1.3 V, and compact form factor dimensions suited to tight PCB layouts. STMicroelectronics designs this MOSFET as an effective solution for hard switching in various electronic, renewable energy, and power conversion applications.

Maximum continuous drain current of 42 A enables high-power capabilities. High voltage rating of 710 V for robust operation in power circuits. Low maximum drain-source resistance helps reduce conduction losses. 3-pin TO-220 package offers reliable through-hole mounting and thermal performance.

Enhancement mode channel with 25 V maximum gate-source voltage for wide control range. Efficient switching enabled by typical gate charge of 98 nC. Power dissipation up to 250 W supports demanding application requirements.

Wide temperature operating range from -55°C to 150°C ensures durability. Compact size with dimensions 15.75mm height, 10.4mm length, and 4.6mm width.

This product is ideal for industrial, commercial, electronic manufacturing, renewable energy systems, and HVAC power management systems. Its technical excellence and robust design ensure high reliability and efficiency in power electronic circuits.

Explore more components in our Semiconductor Power MOSFET category for your advanced electronic design needs at EnvMart.

STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-220 STP57N65M5
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Frequently Asked Questions

The maximum continuous drain current for this model is 42 A, making it suitable for high-power applications.

This MOSFET has a maximum drain-source voltage rating of 710 V, ensuring robust operation in power circuits.

The maximum drain-source resistance is 63 mΩ, which helps minimize power losses during operation.

It is encapsulated in a 3-pin TO-220 package, which is suitable for through-hole mounting.

The typical gate charge is 98 nC, contributing to its efficient switching performance.

This model can dissipate up to 250 W of power, supporting demanding applications.

It operates reliably over a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage for this MOSFET is 25 V, allowing for a wide control range.

The dimensions of this model are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

This device features a Type N channel, designed for enhancement mode operation.

It is suitable for applications such as power supplies, solar power converters, and electronic lighting controls.

The forward voltage rating is 1.3 V, which is relevant for its operation in various circuits.

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