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Vishay Single Type N-Channel Power MOSFET 11 A 500 V TO-263 Package IRFS11N50APBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFS11N50APBF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.52Ω |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Transistor Configuration | Single |
Key Features
- Maximum continuous drain current of 11 A ensures robust current handling.
- High maximum drain-source voltage of 500 V for demanding voltage applications.
- TO-263 package provides effective thermal management and ease of mounting.
- Low maximum drain-source resistance of 0.52 Ω reduces conduction losses.
- Wide operating temperature range from -55°C to 150°C enables versatile use.
- Maximum power dissipation of 170 W ensures excellent heat tolerance.
- Typical gate charge of 52 nC facilitates efficient switching control.
- Compliant with RoHS standards for environmental safety.
Product Description
Vishay IRFS11N50APBF is a single type N-Channel Power MOSFET housed in a TO-263 package designed for high-performance applications requiring efficient power management. It supports a maximum continuous drain current of 11 A and a maximum drain-source voltage of 500 V, suited for high voltage switching.
The MOSFET features a low drain-source resistance of 0.52 Ω at a gate-source voltage of 10 V, enabling minimal conduction losses. Its maximum power dissipation rating of 170 W ensures reliable operation under heavy load conditions, while the wide operating temperature range from -55°C to 150°C allows use in harsh environments.
Its gate charge is typically 52 nC at Vgs, which contributes to simple driving requirements and efficient switching characteristics. This device also adheres to RoHS compliance, assuring it is environmentally friendly without lead or halogen content.
This MOSFET is ideal for industrial, electronic, and power supply applications including switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and high speed power switching circuits. Its construction and performance lead to long service life and high reliability standards.
High continuous drain current and voltage ratings for power applications. Low on-resistance for improved efficiency. Wide temperature operating range suitable for industrial conditions. Optimized switching characteristics reducing losses.
RoHS compliant for safe environmental standards.
Consider Vishay MOSFETs for precise and reliable power control in electronic circuit design. Explore the Semiconductor category on EnvMart for similar efficient Power MOSFETs and complementary semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11 A.
It has a maximum drain-source voltage rating of 500 V, making it suitable for high voltage applications.
This MOSFET is housed in a TO-263 package, which provides effective thermal management and ease of mounting.
The maximum power dissipation rating is 170 W, ensuring reliable operation under heavy load conditions.
The typical gate charge is 52 nC at a gate-source voltage of 10 V, facilitating efficient switching control.
It operates within a wide temperature range from -55°C to 150°C, allowing for versatile use in various environments.
The maximum drain-source resistance is 0.52 Ω, which helps reduce conduction losses.
Yes, this model is compliant with RoHS standards, ensuring it is environmentally friendly without lead or halogen content.
It features a Type N channel configuration, suitable for various power applications.
The maximum gate-source voltage for this MOSFET is 30 V.
This MOSFET is ideal for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits.
The country of origin for this MOSFET is China.
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