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Vishay E Series N-Channel MOSFET, 5 A Continuous Drain Current, 850 V Drain Source Voltage, Enhancement Mode SIHU6N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHU6N80AE-GE3 |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 22.5nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode operation suitable for efficient switching.
- 3-pin TO-251 package with through-hole mounting.
- Maximum power dissipation of 62.5 W ensures reliable thermal performance.
- Low gate charge of 22.5 nC reduces switching losses.
- Integrated Zener diode provides ESD protection.
- Operating temperature range from -55°C to 150°C for industrial applications.
- Forward voltage drop of 1.2 V for efficient conduction.
- Maximum drain-source resistance of 950 mΩ for low conduction losses.
Product Description
Vishay SIHU6N80AE-GE3 is a power MOSFET from the E series with a type N channel and enhancement mode operation. It supports a continuous drain current of 5 A and a maximum drain-source voltage rating of 850 V, making it suitable for power conversion, industrial, and electronic applications.
This MOSFET features a 3-pin TO-251 package designed for through-hole mounting, providing easy integration into power electronic circuits. Its low gate charge of 22.5 nC aids in reducing switching losses, improving efficiency for fast switching applications.
With a maximum power dissipation rating of 62.5 W and an operating temperature range from -55°C to 150°C, it ensures reliable performance under demanding conditions. The device incorporates an integrated Zener diode for electrostatic discharge (ESD) protection, enhancing durability and longevity.
The maximum drain-source resistance of 950 milliohms and a forward voltage drop of 1.2 V help to minimize conduction losses during operation. This makes the SIHU6N80AE-GE3 well suited for industrial, laboratory power supplies, and other electronic control systems requiring robust MOSFET solutions.
Enhancement mode type N channel MOSFET. Maximum continuous drain current of 5 A. Drain-source voltage rating of 850 V. 3-pin TO-251 through-hole package. Low gate charge for efficient switching. High power dissipation capability of 62.5 W.
Wide operating temperature from -55°C to 150°C. Integrated Zener diode for ESD protection. Forward voltage drop of 1.2 V. Maximum drain-source resistance of 950 mΩ.
This product is ideal for applications in industrial equipment, power supplies, electronic circuitry, and other environments requiring reliable and efficient switching elements. The robust specifications and packaging make it a preferred choice for engineers and system designers.
Discover more Power MOSFETs and related semiconductor components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIHU6N80AE-GE3 is 5 A.
This model has a maximum drain-source voltage rating of 850 V.
It uses a 3-pin TO-251 package designed for through-hole mounting.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is rated at 62.5 W.
It has a low gate charge of 22.5 nC, which helps reduce switching losses.
The forward voltage drop is 1.2 V, which aids in efficient conduction.
The maximum drain-source resistance is 950 mΩ, minimizing conduction losses during operation.
Yes, it incorporates an integrated Zener diode for electrostatic discharge (ESD) protection.
It has a type N channel with enhancement mode operation.
This model is suitable for power conversion, industrial applications, and electronic control systems.
The maximum gate-source voltage is 30 V.
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