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DiodesZetex P-Channel MOSFET Type ZXMP10A13F 700mA Current 100V Drain Source Voltage SOT-23 Package ZXMP10A13F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMP10A13F |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMP10A13F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -0.95V |
Key Features
- The device has a surface mount package type SOT-23 suitable for compact PCB designs.
- Enhancement mode channel operation ensures efficient control of the power load.
- Maximum power dissipation is 806mW for stable performance under load.
- Operating temperature ranges from -55°C to 150°C, providing durability in harsh environments.
- Pin count of 3 supports easy integration with standard circuits.
- Maximum gate-source voltage rating is 20V to protect against voltage spikes.
- Low maximum drain-source resistance of 1Ω reduces power loss during operation.
- Typical gate charge of 3.5nC at Vgs ensures fast switching capability.
Product Description
DiodesZetex ZXMP10A13F P-Channel MOSFET is a type P discrete semiconductor transistor designed for electronic component applications where reliable switching and power control are needed. It features a maximum continuous drain current of 700mA and a maximum drain-source voltage of 100V, making it suitable for medium power electronic circuits. The enhancement mode channel provides efficient drive control for switching applications.
This device comes housed in a compact SOT-23 surface mount package with a pin count of 3, making it ideal for space-constrained PCB layouts in industrial, automotive, and consumer electronic devices. It supports a maximum power dissipation of 806mW and operates stably over a wide temperature range from -55°C to 150°C, with AEC-Q101 automotive standard compliance.
Additional electrical characteristics include a maximum gate-source voltage of 20V and a very low maximum drain-source resistance of 1Ω, which help minimize power losses and improve circuit efficiency. Typical gate charge at Vgs is 3.5nC, enabling fast switching speeds for dynamic applications.
This MOSFET is suitable for use in industrial automation, automotive electronics, power management modules, and general-purpose switching circuits. With its robustness, thermal tolerance, and compact footprint, it addresses demanding requirements in semiconductor applications.
The device has a surface mount package type SOT-23 suitable for compact PCB designs. Enhancement mode channel operation ensures efficient control of the power load. Maximum power dissipation is 806mW for stable performance under load.
Operating temperature ranges from -55°C to 150°C, providing durability in harsh environments. Pin count of 3 supports easy integration with standard circuits. Maximum gate-source voltage rating is 20V to protect against voltage spikes.
Low maximum drain-source resistance of 1Ω reduces power loss during operation. Typical gate charge of 3.5nC at Vgs ensures fast switching capability. Automotive standard AEC-Q101 compliance certifies quality for automotive electronics use.
Explore the wide range of MOSFETs and discrete semiconductor devices at EnvMart for your industrial, automotive, and electronic manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 700mA.
This MOSFET has a maximum drain-source voltage rating of 100V.
The maximum power dissipation for this model is 806mW.
The operating temperature range for the ZXMP10A13F is from -55°C to 150°C.
This model comes in a surface mount package type SOT-23.
The maximum gate-source voltage rating is 20V.
The typical gate charge at Vgs is 3.5nC.
This model has a pin count of 3, allowing for easy integration with standard circuits.
The maximum drain-source resistance is 1Ω, which helps reduce power loss during operation.
Yes, it is compliant with the AEC-Q101 automotive standard.
This MOSFET features an enhancement mode P-channel type.
The dimensions are 3.05mm in length, 1.4mm in width, and 1mm in height.
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