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IXYS HiperFET Polar Type N-Channel MOSFET 66A 500V Enhancement SOT-227 Panel Mount IXFN80N50P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.2mm |
| Model | IXFN80N50P |
| Width | 25.07mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 66A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700W |
| Typical Gate Charge Qg @ Vgs | 195nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports maximum continuous drain current of 66A for demanding power applications.
- Rated for maximum drain source voltage of 500V, suitable for industrial and power electronics.
- Enhancement mode provides efficient gate control and reliable operation.
- 4-pin SOT-227 package enables robust panel mounting and efficient heat dissipation.
- HiperFET Polar series features fast intrinsic diode for improved switching response.
- Maximum power dissipation is 700W, suitable for high-power circuits.
- Low drain-source resistance of 65mΩ enhances performance and reduces losses.
- Operating temperature range from -55°C to 150°C for reliable operation in varied environments.
Product Description
IXYS IXFN80N50P is a high-performance HiperFET Polar Type N-Channel Power MOSFET designed for panel-mount industrial and power electronics applications. This MOSFET offers exceptional switching capability with a maximum drain source voltage of 500V and a continuous drain current of 66A, enabling use in demanding industrial circuits that require reliable and efficient power handling.
The device operates in enhancement mode, allowing precise control through its gate terminal (rated for maximum Vgs of 30V). Its low drain-source resistance of 65mΩ minimizes power losses during operation, contributing to higher system efficiency. As part of the HiperFET Polar series, the IXFN80N50P integrates a fast intrinsic diode, supporting rapid switching and protecting against reverse polarity in high-speed applications.
Encased in a robust 4-pin SOT-227 package, the MOSFET is engineered for panel mounting and features advanced thermal management to sustain a maximum power dissipation of 700W. Its typical gate charge is 195nC, ensuring swift gate transitions. The forward voltage drop is rated at 1.5V, supporting consistent performance under dynamic loads.
With an extensive operating temperature range from -55°C to 150°C, the IXFN80N50P is suitable for environments with fluctuating thermal conditions, including industrial automation, power supplies, motor drives, and renewable energy converters. The device's dimensions (38.2mm length, 25.07mm width, and 9.6mm height) allow straightforward integration into high-density electronic assemblies.
The MOSFET's panel-mount design and 4-pin configuration make installation easy and stable, providing enduring connection and mechanical reliability in professional setups. As an advanced discrete power semiconductor, this product is ideal for professional engineers and OEMs seeking robust performance in industrial, manufacturing, and laboratory power systems.
Discover more specialized MOSFETs and advanced power semiconductors from IXYS and other top brands by browsing the EnvMart electronics components section.
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Frequently Asked Questions
The maximum continuous drain current for this model is 66A, making it suitable for demanding power applications.
This MOSFET is rated for a maximum drain-source voltage of 500V, which is appropriate for industrial and power electronics applications.
It can dissipate a maximum power of 700W, allowing it to handle high-power circuits effectively.
The IXFN80N50P is housed in a 4-pin SOT-227 package, designed for panel mounting and efficient heat dissipation.
The operating temperature range is from -55°C to 150°C, which supports reliable operation in varied environments.
The typical gate charge is 195nC, ensuring swift gate transitions during operation.
The drain-source resistance is 65mΩ, which enhances performance and reduces power losses during operation.
The forward voltage drop is rated at 1.5V, supporting consistent performance under dynamic loads.
This model features a Type N channel, operating in enhancement mode for efficient gate control.
The panel-mount design and 4-pin configuration facilitate easy and stable installation, ensuring reliable mechanical connection.
The maximum gate-source voltage is rated at 30V, allowing for precise control through the gate terminal.
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