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Vishay Siliconix TrenchFET Type P-Channel MOSFET 20 V 2.68 A 6-Pin SC-70 Enhancement SQA401EEJ-T1_GE3

Category MOSFET Brand Vishay Siliconix Condition New

Specifications

Country of Origin China
Brand Vishay Siliconix
Height 1mm
Length 2.2mm
Model SQA401EEJ-T1_GE3
Width 1.35mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 2.68A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 13.6W
Typical Gate Charge Qg @ Vgs 4.2nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -1.2V

Key Features

  • The device features a 6-pin SC-70 package for compact mounting.
  • Enhancement mode operation provides efficient switching performance.
  • Maximum drain source resistance is 200 milliohms ensuring low conduction losses.
  • Typical gate charge of 4.2 nC at gate-source voltage of 4.2 V reduces switching losses.
  • Maximum gate-source voltage is 8 V suitable for typical gate drive circuits.
  • Power dissipation rating of 13.6 W allows moderate thermal handling.
  • Operating temperature ranges from -55°C to 175°C for wide environmental tolerance.
  • Complies with AEC-Q101 automotive standard indicating high reliability.

Product Description

Vishay Siliconix SQA401EEJ-T1_GE3 TrenchFET Type P-Channel MOSFET offers robust performance with a maximum continuous drain current of 2.68 A and a maximum drain-source voltage of 20 V, tailored for surface mount applications with a 6-pin SC-70 package. This enhancement mode MOSFET ensures efficient switching in diverse electronic circuits.

Key electrical characteristics include a low drain-source resistance of 200 mΩ to minimize power loss and a typical gate charge of 4.2 nC at Vgs which aids in fast switching transitions. The device tolerates a maximum gate-source voltage of 8 V and dissipates up to 13.6 W of power without degradation.

Designed for reliability, this MOSFET operates across a wide temperature range from -55°C to 175°C and meets the stringent AEC-Q101 standard, making it suitable for automotive and industrial applications requiring long-term durability and performance consistency.

With compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height, the component fits well in space-constrained PCB layouts. The SC-70 package facilitates ease of mounting and compatibility with automated assembly lines.

The device is ideal for switching and amplification in electronic circuits. Applicable in automotive, industrial, and consumer electronics sectors. Supports surface mount technology for modern manufacturing. Offers enhanced reliability per automotive grade standards.

Enables designers to optimize power efficiency and thermal management. Compact size supports miniaturization in electronic designs. Useful in power management, signal processing, and driver circuits.

This Vishay Siliconix MOSFET series is a dependable choice for engineers seeking balanced electrical performance and operational durability. Explore more options in MOSFETs and discrete semiconductors at EnvMart.

Vishay Siliconix TrenchFET Type P-Channel MOSFET 20 V 2.68 A 6-Pin SC-70 Enhancement SQA401EEJ-T1_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.68 A.

This device has a maximum drain-source voltage of 20 V.

The power dissipation rating for this MOSFET is 13.6 W.

The typical gate charge at a gate-source voltage of 4.2 V is 4.2 nC.

The maximum gate-source voltage for this model is 8 V.

The dimensions of this unit are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

This MOSFET operates within a temperature range of -55°C to 175°C.

It uses a 6-pin SC-70 package for compact mounting.

This device complies with the AEC-Q101 automotive standard, indicating high reliability.

The maximum drain-source resistance is 200 milliohms.

This model is a P-Channel MOSFET.

It is suitable for applications in automotive, industrial, and consumer electronics sectors.

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